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    007N06N Search Results

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    007N06N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPT007N06NATMA1

    MOSFET N-CH 60V 300A 8HSOF
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    DigiKey IPT007N06NATMA1 Cut Tape 83,669 1
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    Newark () IPT007N06NATMA1 Tape & Reel 3,211 10
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    IPT007N06NATMA1 Cut Tape 3,211 1
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    EBV Elektronik IPT007N06NATMA1 74,000 16 Weeks 2,000
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    Infineon Technologies AG IPTG007N06NM5ATMA1

    MOSFET N-CH 60V 53A/454A HSOG-8
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    DigiKey () IPTG007N06NM5ATMA1 Tape & Reel 27 1,800
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    IPTG007N06NM5ATMA1 Digi-Reel 27 1
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    IPTG007N06NM5ATMA1 Cut Tape 27 1
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    Newark () IPTG007N06NM5ATMA1 Tape & Reel 191 100
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    IPTG007N06NM5ATMA1 Cut Tape 191 1
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    Infineon Technologies AG ISC007N06NM6ATMA1

    TRENCH 40<-<100V
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    DigiKey () ISC007N06NM6ATMA1 Tape & Reel 5,000
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    ISC007N06NM6ATMA1 Digi-Reel 1
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    ISC007N06NM6ATMA1 Cut Tape 1
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    Infineon Technologies AG IPTC007N06NM5ATMA1

    - Tape and Reel (Alt: IPTC007N06NM5ATMA1)
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    Avnet Americas IPTC007N06NM5ATMA1 Tape & Reel 1,800 52 Weeks 1,800
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    Infineon Technologies AG IPT007N06N

    MOSFETs IFX FET 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPT007N06N 8,467
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    Win Source Electronics IPT007N06N 27,831
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    007N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 007N06N 1Description HSOF Features Tab •100%avalanchetested


    Original
    IPT007N06N IEC61249-2-21 PDF

    Contextual Info: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N PDF

    IPT007N06N

    Abstract: f150at IPT00 d150 fet 007N06N
    Contextual Info: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N IPT007N06N f150at IPT00 d150 fet 007N06N PDF

    007N06N

    Contextual Info: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N 007N06N PDF