IPI600N25N3 Search Results
IPI600N25N3 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI600N25N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; | Original | 427.51KB | 11 | ||
| IPI600N25N3GAKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TO262-3 | Original | 633.77KB |
IPI600N25N3 Price and Stock
Infineon Technologies AG IPI600N25N3GAKSA1Trans MOSFET N-CH 250V 25A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI600N25N3GAKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI600N25N3GAKSA1 | Tube | 500 |
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IPI600N25N3GAKSA1 | 200 | 1 |
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Buy Now | ||||||
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IPI600N25N3GAKSA1 | 53 Weeks | 50 |
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Infineon Technologies AG IPI600N25N3GOPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI600N25N3G | 2,969 |
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Get Quote | |||||||
IPI600N25N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
600N25N
Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
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ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+8 | |
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Contextual Info: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature |
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ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+3 | |
600N25NContextual Info: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature |
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ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+3 | |
600N25N
Abstract: IEC61249-2-21 JESD22 PG-TO220-3
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ipb600n25n3ipp600n25n3ipi600n25n3iec61249-2-21+5 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6 |