IPD200N15N3 Search Results
IPD200N15N3 Price and Stock
Infineon Technologies AG IPD200N15N3GATMA1MOSFET N-CH 150V 50A TO252-3 |
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IPD200N15N3GATMA1 | Reel | 47,500 | 2,500 |
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IPD200N15N3GATMA1 | Ammo Pack | 56 Weeks, 4 Days | 1 |
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IPD200N15N3GATMA1 | 26,725 |
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IPD200N15N3GATMA1 | 2,000 |
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IPD200N15N3GATMA1 | 52,500 | 1 |
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IPD200N15N3GATMA1 | 1 |
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IPD200N15N3GATMA1 | 5,000 |
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IPD200N15N3GATMA1 | Cut Tape | 22,366 | 1 |
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IPD200N15N3GATMA1 | 5,000 | 1 |
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Infineon Technologies AG IPD200N15N3GBTMA1MOSFET N-CH 150V 50A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD200N15N3GBTMA1 | Reel |
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Infineon Technologies AG IPD200N15N3GPOWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD200N15N3G | 3,672 |
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Infineon Technologies AG IPD200N15N3 GRoHS(Ship within 1day) - D/C 2022 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD200N15N3 G | 4,653 |
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IPD200N15N3 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPD200N15N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 150.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 50.0 A; | Original | |||
IPD200N15N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 50A TO252-3 | Original | |||
IPD200N15N3GBTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 50A TO252-3 | Original |