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    IPB200N15N3 Search Results

    IPB200N15N3 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB200N15N3
    Infineon Technologies N-CHANNEL POWER MOSFET Original PDF 1.01MB
    IPB200N15N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 150.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 50.0 A; Original PDF 531.33KB 12
    IPB200N15N3GATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 50A TO263-3 Original PDF 972.35KB
    SF Impression Pixel

    IPB200N15N3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB200N15N3GATMA1

    MOSFET N-CH 150V 50A D2PAK
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    DigiKey () IPB200N15N3GATMA1 Cut Tape
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    IPB200N15N3GATMA1 Reel
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    IPB200N15N3GATMA1 Digi-Reel
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    Avnet Americas IPB200N15N3GATMA1 Reel 1,000
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    Verical () IPB200N15N3GATMA1 1,928 11
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    IPB200N15N3GATMA1 1,000 253
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    IPB200N15N3GATMA1 368 253
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    Newark IPB200N15N3GATMA1 Bulk 1
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    Rochester Electronics IPB200N15N3GATMA1 1,368 1
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    • 100 $1.19
    • 1000 $1.06
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    TME IPB200N15N3GATMA1 1
    • 1 $2.47
    • 10 $2.35
    • 100 $1.87
    • 1000 $1.25
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    Chip One Stop IPB200N15N3GATMA1 Cut Tape 1,928 0 Weeks, 1 Days 1
    • 1 $2.85
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    Vyrian IPB200N15N3GATMA1 3,846
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    Bristol Electronics IPB200N15N3 G 147
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    Infineon Technologies AG IPB200N15N3G

    POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
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    Quest Components IPB200N15N3G 203
    • 1 $3.30
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    • 100 $1.65
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    Vyrian IPB200N15N3G 14,852
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    IPB200N15N3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    200N15N

    Abstract: ipd200n15n3 IEC61249-2-21 IPP200N15N3 PG-TO220-3
    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 150 V • N-channel, normal level R DS on ,max 20 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 200N15N IEC61249-2-21 PG-TO220-3 PDF

    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS 3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 PDF

    200N15N3

    Abstract: 200N15N IPD200N15N3 ipp200n15n3 IPD200N15N3 G
    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS 3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 200N15N3 200N15N3 200N15N IPD200N15N3 G PDF

    200n15n

    Abstract: IPD200N15N3 IPP200N15N3 G ipp200n15n3
    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS 3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 200N15N 200n15n IPP200N15N3 G PDF

    200n15n

    Abstract: ipd200n15n3 IPP200N15N3 PG-TO220-3 PG-TO262-3 200N1
    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS 3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 20 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 PG-TO252-3 200n15n PG-TO220-3 PG-TO262-3 200N1 PDF

    200N15N

    Contextual Info: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G OptiMOS 3 Power-Transistor IPP200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)


    Original
    IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 200N15N PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original
    PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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