IPB60R385CP Search Results
IPB60R385CP Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPB60R385CP |
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 385.0 mOhm; ID(max) @ TC=25°C: 9.0 A; IDpuls (max): 27.0 A; | Original | |||
IPB60R385CPATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9A TO-263 | Original |
IPB60R385CP Price and Stock
Infineon Technologies AG IPB60R385CPATMA1MOSFET N-CH 600V 9A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB60R385CPATMA1 | Cut Tape |
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IPB60R385CPATMA1 | 4,000 | 1 |
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IPB60R385CPATMA1 | 1 |
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Infineon Technologies AG IPB60R385CPCOOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB60R385CP | 465 |
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Get Quote |