Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IDT71B88 Search Results

    IDT71B88 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    static ram 64K

    Contextual Info: IDT71B88 BiCMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC M O S static RAM • H igh-speed address/chip select tim e — C om m ercia l: 10/12ns • S ingle chip select • S ingle 5V (±10% ) pow er supply


    OCR Scan
    idt71b8810/12ns22-pin24-pin+6200mvidt71b871b88mil-std-883300-milstatic ram 64k PDF

    Contextual Info: IDT71B88 BiCMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC M O S static RAM • H igh-speed ad dress/chip se le ct tim e — C om m ercia l: 10 /12ns • S ingle chip select • S ingle 5V (+10% ) po w e r supply


    OCR Scan
    idt71b88/12ns22-pin24-pin+3200mv71b88300-m PDF

    Contextual Info: PRELIMINARY IDT71B88 BiCMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC E M O S static RAM • High-speed address/chip select time — Military: 10/12/15ns — Commercial: 8 /1 0 /1 2ns • Single chip select


    OCR Scan
    idt71b8810/12/15ns22-pin22pin+524-pin536-bit200mvmil-std-883300-mil PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan
    km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464 PDF

    Contextual Info: PRELIMINARY 1DT71B88 BiCMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC EM O S static RAM • High-speed address/chip select time — Military: 10/12/15ns — Commercial: 8 /1 0 /1 2ns • Single chip select


    OCR Scan
    1dt71b8810/12/15ns22-pin22pin+524-pin536-bit200mvmil-std-883300-mil PDF