HY57V654010A Search Results

Contextual Info: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized a s 2banks of

96ns

Contextual Info: HY57V654010A 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized as 2banks of

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

BYTE18

Abstract: BYTE65 HYM7V75AS1601ATNG
Contextual Info: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt

HYM7V75AS1601

Contextual Info: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION