HWC30NC Search Results

HWC30NC

Contextual Info: HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET

Contextual Info: HWC30NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.