2SC5111
Abstract: HN3C14FT
Contextual Info: T O S H IB A HN3C14FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C14FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6
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hn3c14ft2sc51111000mhz30mhz |
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Contextual Info: T O SH IB A TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H Mí f 1 dFT • ■ m 'm w ■ ■ ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ±0.1 TWO devices are built in to the super-thin and ultra super
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hn3c14ft2sc5111s21el21000mhz+130mhz
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2SC5111
Abstract: HN3C14FT
Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
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hn3c14ft2sc5111 |
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2tj transistor
Contextual Info: TO SHIBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 IJ5ÎU.1
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hn3c14ft2sc5111s21el21000m+12tj transistor
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Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 1.25 ± 0.1
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hn3c14ft2sc5111 |
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2SC5111
Abstract: HN3C14FT
Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
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hn3c14ft2sc5111 |
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256toshiba rf power module s-av24diode varicap bb 112varicap v1472sc386a2sk13103sk782sc5066v101 varicap diode1sv1492sk192
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+132sc2644s-av243sk1153sk291s12563sk733sk121toshiba rf power module s-av243sk101s-au82vldiode varicap bb 1122sc23283sk112
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3sk1143sk126s12552sc2644+13s-av243sk1153sk291s1256s-av26hbb 505 varicap diodev101 varicap diodevaricap v101varicap v147varicap v103replacement for 2sc5088 horizontal transistorstoshiba s-av29hzener c9v
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+14s-av243sk1153sk291s1256s-av26hfet k161k192atransistor c1923c1923 transistork161 jfetfet k241k161 mosfetc1923 transistor basec2498 transistor
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256fet k161transistor c2216transistor k161k161 jfetk192atransistor c2668fet k241k161 mosfettransistor c2347transistor c1923
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2sc5088 horizontal transistors
Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+152-av243sk1153sk291s12562-av26h2sc5088 horizontal transistorss-av362sk192 mosfet data3sk121 equivalents-av323sk121 fet2sc2879 cb linear circuitreplacement for 2sc5088 horizontal transistors3sk73equivalent transistor 2sc2509
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2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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2sc50652sc50852sc50902sc5095+15mt3s06umt3s07u2sc50662sc50862sc50912sc50962sk3075 equivalent10 ghz transistor2sk3078mt3s04tmt6p03aemt6p06e3sk32024lu1transistor 2sc5066
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