HN2C01 Search Results

Contextual Info: TOSHIBA HN2C01 FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN2C01FU Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VcEO = 50V, Ic = 150mA (MAX.)

Contextual Info: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity

Contextual Info: SILICON PNP EPITAXIAL TYPE HN2C01FU AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : VcEO = 50V, Ic = 150mA (MAX.) • High hpE : hp-j; = 120~400 • Excellent hpE Linearity : hpE ( I c = 0.1mA)/hpE (Ic = 2mA) = 0,95 (Typ.)

HN2C01FE

Contextual Info: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) : hFE = 120~400 High hFE Excellent hFE linearity

HN2C01FE

Contextual Info: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity

Contextual Info: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE z Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.)

HN2C01FU

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm l Small package (dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400

HN2C01FE

Contextual Info: HN2C01FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 HN2C01FE ○ 低周波増幅用 ○ AM 増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。

HN2C01FU

Contextual Info: HN2C01FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN2C01FU ○ 低周波増幅用 ○ AM 増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400

HN2C01FU

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

BD123

Abstract: HN2C01FU
Contextual Info: TO SHIBA HN2C01FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN2C01FU Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 .1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VCEO —50V, I q = 150mA (MAX.)

HN2C01FU

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

HN2C01FU

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor