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    HMBTA14 Datasheets (2)

    Hi-Sincerity Mocroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HMBTA14
    		Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF 31.37KB 3
    HMBTA14
    		Hi-Sincerity Mocroelectronics NPN Bipolar Transistors Original PDF 29.41KB 3

    HMBTA14 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HMBTA14

    Contextual Info: HI-SINCERITY Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures


    Original     		he6841hmbta14ot-23183oc+2217oc260oc PDF

    HMBTA14

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C


    Original     		he6841hmbta14 PDF

    darlington transistor SOT-23

    Abstract: HMBTA14
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures


    Original     		he6841hmbta14ot-23darlington transistor sot-23 PDF

    SOT23 MARKING

    Abstract: HMBTA14 HMBTA64
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		he6807hmbta64500maot-23+2hmbta14sot23 marking PDF

    HMBTA14

    Abstract: HMBTA64
    Contextual Info: HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		he6807hmbta64500maot-23+4hmbta14183oc217oc260oc PDF

    hmbta64

    Abstract: HMBTA14 PT 10000
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		he6807hmbta64500mahmbta14+1pt 10000 PDF