HM5116400B Search Results
HM5116400B Datasheets (24)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| HM5116400BLS-6 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLS-6 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLS-7 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLS-7 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLS-8 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLS-8 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-6 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-6 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-7 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-7 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-8 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BLTS-8 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BS-6 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BS-6 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BS-7 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BS-8 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BS-8 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400B Series | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.09KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BTS-6 | Hitachi Semiconductor | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 422.1KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HM5116400BTS-6 | Renesas Technology | 4,194,304-word x 4-bit Dynamic Random Access Memory | Original | 283.87KB | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HM5116400B Price and Stock
Hitachi Ltd HM5116400BTS6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HM5116400BTS6 | 41 |
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HM5116400B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HB56A840BR-6B
Abstract: HB56A840BR-7B HB56A840BR-8B
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hb56a840br608-word40-bitade-203rev+6 | |
wj 27.145
Abstract: uua 35
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hm5116400b304-wordade-203-367amw/385+3 | |
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Contextual Info: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode |
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hm5116400b304-wordade-203-367a440mw/385+1 | |
Hitachi DSA00164Contextual Info: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word × 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode |
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hm5116400b304-wordade-203-367amw/385+3 | |
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Contextual Info: HB56A840BR Series 8,388,608-word x 40-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A840BR is a 8 M × 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM HM5116400BS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in-line package. |
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hb56a840br608-word40-bitade-203rev+3 | |
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Contextual Info: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16Mbit DRAM (HM5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin |
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hb56t432d304-word32-bitade-203rev+3 | |
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Contextual Info: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode |
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hm5116400b304-wordade-203-367amw/385+2 | |
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Contextual Info: HB56A440BR Series 4,194,304-word x 40-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A440BR is a 4 M × 40 dynamic RAM module, mounted 10 pieces of 16-Mbit DRAM HM5116400BS sealed in SOJ package. An outline of the HB56A440BR is 72-pin single in-line |
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hb56a440br304-word40-bitade-203rev+3 | |
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Contextual Info: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode |
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hm5116400b304-wordade-203-367a44tb203+1 | |
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Contextual Info: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16Mbit DRAM (HM5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin |
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hb56t432d304-word32-bitade-203rev+3 | |
HB56T432DContextual Info: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M × 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is |
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hb56t432d304-word32-bitade-203rev+3 | |
HB56T432DContextual Info: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M × 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16Mbit DRAM (HM5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin |
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hb56t432d304-word32-bitade-203rev+3 | |
IA812Contextual Info: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode |
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hm5116400b304-wordade-203-367amw/385+3 | |
HM5116400BLS-6
Abstract: HM5116400BLS-7 HM5116400BLS-8 HM5116400BS-6 HM5116400BS-7 HM5116400BS-8 HM5116400BTS-6 HM5116400BTS-7 Hitachi DSA0015
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hm5116400b304-wordade-203-367amw/385+11 | |
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Contextual Info: ADE-367 Z HM5116400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary L I IT A O H I <11 I M O m T h e H ita c h i H M 5 1 1 6 4 0 0 B /B L is a C M O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology |
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ade-367hm5116400b/bl304-word5116400b/bl+5 | |
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Contextual Info: HB56A472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Description The HB56A472E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The HB56A472E is a 4 M |
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hb56a472e304-word72-bit16-mbit+3 | |
HM51W16405Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in |
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dp-22ndp-22nbhm6287hm6288+6 | |
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Contextual Info: HB56A472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI Description The HB56A472E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The HB56A472E is a 4 M |
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hb56a472e304-word72-bit16-mbitdram+3 | |
74ABT16244
Abstract: HB56A472E HB56A472E-6B HB56A472E-7B HB56A472E-8B
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hb56a472e304-word72-bit16-mbit+6 | |
SC 2272Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in |
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dp-22ndp-22nbhm6287hm6288+6 | |
CC1184Contextual Info: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI Description The HB56A464EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. |
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hb56a464ej304-word64-bit16-mbit+5 | |
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Contextual Info: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series |
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512kx8512kx8rhm62w8512ahm628512ahm628512+6 | |
3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
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hb56u132hb56h132hb56u232hb56h232+16 | |
HM5116400ATS
Abstract: 179d Hitachi DSA0066
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ade-203-179dhm5116400a/al304-wordmw/385+7 | |