H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
|
Original
|
he6274-bh2n6520h2n6517 |
PDF
|
H2N6427
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
|
Original
|
he6274-bh2n6427 |
PDF
|
H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
|
Original
|
he6274h2n6520h2n6517183oc+2217oc260oc
|
PDF
|
DARLINGTON TIN
Abstract: H2N6427 Darlington transistor to 92
Contextual Info: HI-SINCERITY Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
|
Original
|
he6274h2n6427183oc217oc+3260ocdarlington tindarlington transistor to 92
|
PDF
|