H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
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he6274-bh2n6520h2n6517 |
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H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
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he6274h2n6520h2n6517183oc+2217oc260oc
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H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
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he6268h2n6517h2n6520183oc+2217oc260oc
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H2N6517
Abstract: H2N6520
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 1/4 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
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he6268-bh2n6517h2n6520 |
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