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HAT2175H Datasheets (3)

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Renesas Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HAT2175H		Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	72.81KB	10
HAT2175H		Renesas Technology	MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.033; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1445; toff ( us) typ: 0.028; Package: LFPAK	Original	PDF	84.59KB	8
HAT2175H-EL-E		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15A 5LFPAK	Original	PDF		10

HAT2175H Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation HAT2175H-EL-E MOSFET N-CH 100V 15A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HAT2175H-EL-E	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	HAT2175H-EL-E		7,062			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HAT2175H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DNP resistors Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE Contextual Info: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107	Original	ISL8107EVAL2Z AN1459 ISL8107 ISL8107 com/data/fn/fn6605 ISL8107EVAL2Z DNP resistors V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE	PDF
HAT2175H Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Contextual Info: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L	PDF
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as	PDF
HAT2175H Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF