H7N0602LS
Abstract: H7N0602LD H7N0602LD-E H7N0602LM H7N0602LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 Features • Low on-resistance RDS on = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A
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h7n0602ldh7n0602lsh7n0602lmrej03g1130-0600+5prss0004ae-aprss0004ae-bprss0004ae-ch7n0602ld-eh7n0602lstl-e
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3V02
Abstract: Hitachi DSA00280 H7N0602LS
Contextual Info: H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1526C Z 4th. Edition May 2002 Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline LDPAK 4 4 4 D
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h7n0602ldh7n0602lsh7n0602lmade-208-1526c+23v02hitachi dsa00280
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H7N0602LS
Contextual Info: H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0500 Previous: ADE-208-1526C Rev.5.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching
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h7n0602ldh7n0602lsh7n0602lmrej03g1130-0500+4ade-208-1526cprss0004ae-aprss0004ae-bprss0004ae-c
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H7N0602LD
Abstract: H7N0602LM H7N0602LS
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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d-85622d-85619h7n0602ldh7n0602lm+1h7n0602ls
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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H7N0602LD
Abstract: H7N0602LD-E H7N0602LM H7N0602LS H7N0602LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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H7N1009MD
Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility
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cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as
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