GQ153 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 T b m 4 2 GQ153ÜM T3b ■ KMM53681OOH/HG SM 6 K DRAM MODULES 8M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC ICAO tRC 60ns 15ns 110ns KMM5368100H-7 70ns 20ns 130ns KMM5368100H-8 80ns

irfip254

Contextual Info: International " [i ^rI Rectifier HEXFET« Power MOSFET 0015322 ‘,27 •INR PD9747 IRFIP254 INTERNATIONAL RECTIFIER • Isolated Package • DC Package Isolations 4.0KVDC • AC Package lsolation= 2.0KVRMS © • Lead to Lead Creepage Dist.= 7.5mm • Sink to Lead Creepage Dist.= 6.0mm

Contextual Info: 001S S 7S M lfi • f i l m M it s u b is h i m ic r o c o m p u t e r s M 37720S1FP.M 37720S1AFP M I T S U B I S H K MICMPTR/t ÌPRC blE îe -B IT CMOS MICROCOMPUTER DESCRIPTION The M37720S1FP and M37720S1AFP are 16-bit micro­ computers designed with high-performance CMOS silicon

burr-brown electrometer amplifiers

Contextual Info: SURR —BR0 üJN CORP H E ] I1 7 3 1 3 L .C n ni • -urjjjjbü q üuJ,5331 T B U R R -B R O W N - 1 7 I I COMPONENTS e! - / S ' - OPA128SM/883B REVISION NONE JULY, 1988 D ifet® Electrometer-Grade MILITARY OPERATIONAL A M PLIFIER