GA50T Search Results

GA50TS120U

Contextual Info: PD - 50064A GA50TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: VS-GA50TP60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in1 Package 600 V, 50 A FEATURES • Low VCE on trench NPT IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Rugged with ultrafast performance

217 diode

Abstract: GA50TS120K diode rg2
Contextual Info: PRELIMINARY GA50TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology

Contextual Info: International IQ R Rectifie r PD - 5.064 GA50T S 120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK -• 3 Featu res r • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA50TS120U

Contextual Info: PD - 5.064 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA50TS120U Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

048 itt diode

Abstract: ga 39 diode KDI attenuator GA-34-T
Contextual Info: TEMPERATURE COMPENSATED DIGITALLY CONTROLLED ATTENUATO RS, PIN DIODE ABSORPTIVE DIODE TYPE S E R IE S GA-TT/TR GENERAL MFORMATION: Digitaiy controlled analog attenuators built by KDI/Triangle are controlled by TTL binary logic. Standard units have 8 logic inputs (bits) and therefore can produce 256 discrete values of atten­

HEXFET

Abstract: GA200TD120U GA500TD60U GA100TS60U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999

IRG41BC20W

Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Contextual Info: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles

IC 50061

Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

Contextual Info: International I R Recti fi G f PD - 5.064 PR E LIM IN A R Y "HALF-BRIDGE" IGBT INT-A-PAK G A 5 0 T S 12 0U Ultra-Fast Speed IGBT Features V ces = 1200V • G e n e ratio n 4 IG B T technology • U ltraFast: O p tim ize d for high operating fre q u e n c ie s 8 -4 0 k H z In hard sw itching, > 2 0 0

GA400GD25S

Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
Contextual Info: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply

HF50C120ACE

Abstract: hf50c120
Contextual Info: PD - 2.598 Preliminary HF50C120ACE HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)