G007333 Search Results

MPS6601

Abstract: MPS6602 transistor 7
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E MPS6602 D 1 7*^4142 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR r " r T-29-21 AMPLIFIER TRANSISTOR • C o lle cto r-E m itte r Voltage: V c e o = 4 0 V • C o lle cto r D issipation: P c max =825mW ABSOLUTE MAXIMUM RATINGS (T. =25°C)

Contextual Info: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D | 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)