G0037 Search Results

Contextual Info: L ALLEGRO MI C R O S Y S T E M S INC =13 » 0SD433Û G0037ÖD IALGR T-91-01 PROCESS BKF Process BKF Schottky Diode P roce ss B K F is a high-speed silicon Schottkybarrier diode. It has a typical breakdown-voltage rat­ ing of 7 0 V and can operate with up to 200 m A of

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high

SK200da100d

Contextual Info: S IE D I SEtUKRON Ö13bb71 G0037b0 703 « S E K G s e M IK R D n INC Maximum Ratings Conditions VcEVsus lc = 1 A, V be = - 2 V > OJ I II III CO > VcEV Ie = o VcBO Units Values Symbol 1000 V 1000 V 1000 V 200 A If = - lc D. C. 200 A o II V D. C. o 7 lc V ebo

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: MIE D TAIWAN LITON ELECTRONIC • flfl3Sb^S Q0037M5 3^3 ■ TLIT TS- 50301/50801 SFRIFS LTS 50302A/50802A ShRlhS T L I T E M * 5 INCH SINGLE COLOR & MULTICOLOR ULTRA LARGE SINGLE D IG IT LED NUMERICAL DISPLAY FEATURES • • • • • • • • • •

nec 2501 optocoupler

Abstract: DIN 32676 Wiring Diagram pt-100 siemens pt100 temperature sensor schematic DEUTSCH connectors abc nec matrix Vacuum tube display nec 14308 Siemens PT100 temperature sensor coriolis D184B111U02
Contextual Info: Operating Instruction D184B111U02 Mass Flowmeter CoriolisMaster FCM2000 Standard software D699G001U01 C.1x D699G001U02 C.1x D699G001U03 C.1x P R O F PROCESS FIELD BUS B U S I Blinder Text Mass Flowmeter CoriolisMaster FCM2000 Operating Instruction D184B111U02

skm 200 gb 122 d

Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Contextual Info: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity

Contextual Info: □IXYS Preliminary D ata S heet IXSH25N120A IGBT ^C25 VCES Improved SCSOA Capability Symbol V CE sat Test Conditions Maximum Ratings TO-247AD v CES Ta = 25°C to 150°C 1200 V v CGR Tj 1200 V = 25°C to 150°C; RGE= 1 MCI v GES Continuous ±20 V v GEM Transient

Contextual Info: May 1992 PRELIMINARY Micro Linear ML4404 Trajectory Generator GENERAL DESCRIPTION FEATURES The ML4404 Trajectory Generator provides the trajectory function for time optimal head positioning systems. The ML4404 receives position and velocity information from a servo controller, such as the

MP574AJD

Abstract: MP574AKD
Contextual Info: MICRO PO W E R S Y S T E M S INC 45E D El bQc1744M DQOBTDO 5 EIMPS r-si-io-ii. MP574A Complete 12-Bit, 25^sec Analog-to-Digital Converter With Microprocessor Interface Micro Power Systems FEATURES • Complete 12-Bit A/D Converter with Reference Clock and Three-State Outputs

NTE9099

Abstract: NTE9924 NTE9930 NTE9961 NTE9158 nte9093 NTE9800 NTE9135 NTE9157 NTE913
Contextual Info: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) Q1 □ Q1 Q GND Q NTE9157, 14-Lead DIP, See Diag. 247 NTE9158 Quad 2-Input Buffer,.Hex Inverter (Output Loading Factor = 25/27)

Contextual Info: 14E D INTEGRATED DEVICE • MÔS5771 00037bl 3 m CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 BIT & 4096 x 9 BIT IDT 72132 IDT 72142 FEATURES: DESCRIPTION: • 35ns parallel port access time ’ The IDT72132/72142 are high-speed, low-power serlal-toparallel FIFOs. These FIFOs are Ideally suited to serial communi­

Contextual Info: bq2002 BENCHMARQ Fast Charge 1C Features General Description > Fast charge of nickel cadmium or nickel-metal hydride batteries The bq2002 Fast Charge IC is a lowcost CMOS battery charge controller providing reliable charge termination for both NiCd and NiMH b attery

mt90c

Abstract: MT56C0816EJ-25 mt56c0816
Contextual Info: MICRON TECHNOLOGY INC SSE T> WÊ blllSHT 0 0 0 3 ^ 3 7HT B U R N MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM V H C Z R O N CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL4KX16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common

Contextual Info: 14E D INTEGRATED DEVICE • 4Û2S771 00G3747 =1 CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT IDT 72131 IDT 72141 FEATURES: DESCRIPTION: • 35ns parallel port access time • 5 0M H z serial port shift rate Th e ID T72131/72141 are high-speed, low power paraliei-toserlal FIFOs. These FIFOs are Ideally suited to serial com munica­

Contextual Info: .100" 2.54 mm Header (Preferred Version in Europe and Asia) 1100-12 Right Angle Locking (High Backwall) Right angle locking polarizing headers with preinserted .025” square pins. Allows many design options, when low profile or locked interconnects are required. Mates

Contextual Info: September 1994 Micro Linear ML4411 Sensorless Spindle Motor Controller GENERAL DESCRIPTION Th e 4411 provides com plete com m utation for delta or w y e w ou nd Brushless D C B L D C motors w ithout the need for signals from H all Effect Sensors. T h is 1C senses

Contextual Info: H Y 6 2 8 1 0 0 A -HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: XICOR INC ^41743 SEE D QDD3731 47fi * X I C Preliminary Information Z8 Microcontroller Family Compatible X86C64 64K 8 1 9 2 x 8 Bit E2 Micro-Peripheral ~ F 4 0 - 1 5 -9 0 FEATURES DESCRIPTION * CONCURRENT READ WRITE — Dual Plane Architecture Isolates Read/Write Functions

2SC1172

Abstract: SOLITRON DEVICES
Contextual Info: MAE D SOLITRON DEVICES INC • 0Olitran Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2SC1172 TYPE: NPN S IL IC O N CASE: TO—3 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (VCE0) Voltage, Emitter to Base (VEB0) Collector Current (lc) .