FSYC9055R Search Results

Contextual Info: FSYC9055D, FSYC9055R S e m iconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1998 Features Description • 59A, -60V, ros ON = 0-027S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSYC9055D, FSYC9055R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1998 Features Description • 59A, -60V, ros ON = 0-027Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

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Abstract: FSYC9055D FSYC9055R
Contextual Info: [ /Title FSYC 9055D, FSYC 9055R /Subject (Radiation Hardened, SEGR Resistant PChannel Power MOSFETs) /Autho r () /Keywords (Radiation Hardened, SEGR Resistant PChannel Power MOSFETs) /Creator () /DOCI FSYC9055D, FSYC9055R UCT CT ROD PRODU P E T E E T R L