FDZ2551N Search Results

F2551

Contextual Info: FDZ2551N Dual N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2551N minimizes both PCB space and RDS ON . This dual BGA MOSFET embodies a

Contextual Info: S E M IC O N D U C T O R tm FDZ2551N Dual N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space

FDZ2551N

Contextual Info: FDZ2551N Dual N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2551N minimizes both PCB space and RDS ON . This dual BGA MOSFET embodies a

Contextual Info: FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS ON . This dual BGA MOSFET embodies a

Contextual Info: FDZ2551N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2551N minimizes both PCB space

FDZ2551N

Contextual Info: FDZ2551N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2551N minimizes both PCB space

ls1j

Abstract: FDZ2551N Dual N-Channel 2.5V
Contextual Info: S E M IC O N D U C T O R tm FDZ2551N Dual N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description C o m b in in g F a irc h ild ’s P o w e rT re n c h p ro c e s s Features advanced w ith s ta te 2 .5 V of th e s p e c ifie d a rt • BGA

F2551

Abstract: FDZ2551N
Contextual Info: FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS ON . This dual BGA MOSFET embodies a

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

LCD TV SMPS circuit

Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Contextual Info: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient

EQUIVALENT fds4435

Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
Contextual Info: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

LSI SAS 2208

Abstract: li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic
Contextual Info: 1 Discrete Features Optoelectronics • Independent current limiting and shutdown controls · VTT output sources and sinks up to 3A · Tracking VDDQ /2 to within ±2% · VREF output follows VTT within ±40mV · Comprehensive New Product List · New Product Highlights

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

bz71

Abstract: BZ5.2 AZ51 FDZ201N FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553NZ Fairchild wafer fab
Contextual Info: Date Created: 4/20/2004 Date Issued: 5/10/2004 PCN # 20040502-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

Eftec

Abstract: FDZ197 FDZ203N FDZ206P FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P gem 65
Contextual Info: Date Created: 1/29/2004 Date Issued: 3/2/2004 PCN # 20040502 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

FDZ201N

Abstract: FDZ202P FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553N FDZ2553NZ FDZ2554PZ FDZ5047N
Contextual Info: Date Created: 12/30/2003 Date Issued: 2/2/2004 PCN # 20040001 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

FDZ201N

Abstract: FDZ202P FDZ203N FDZ204P FDZ208P FDZ2551N FDZ2552P FDZ2553N FDZ2554P FDZ5047N
Contextual Info: Discrete MOSFET BGA RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) BGA N-Channel 2.0x2.0 mm FDZ203N 20 Single - 0.018 0.03 - 11 7.5 1.6 20 Single - 0.018 0.03 - 11 9 2 FDZ2553N

FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V