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FDU6N50 Datasheets (3)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDU6N50		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	817.28KB	9
FDU6N50F		Fairchild Semiconductor	N-Channel MOSFET 500V, 5.5A, 1.15 Ohm	Original	PDF	318.6KB	9
FDU6N50TU		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	817.26KB	9

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FAIRCHILD FDU6N50TU FDU6N50TU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	FDU6N50TU		4,325		666	1 - 10 - 100 - 1000 $0.52 10000 $0.46	Buy Now
Fairchild Semiconductor Corporation FDU6N50TU Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDU6N50TU		3,910		1	1 $1.45 10 $1.45 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
Quest Components ()	FDU6N50TU		3,128			1 $2.32 10 $2.32 100 $2.32 1000 $0.81 10000 $0.70	Buy Now
	FDU6N50TU		3,128			1 $1.93 10 $1.93 100 $1.93 1000 $1.93 10000 $0.43	Buy Now
Rochester Electronics	FDU6N50TU		9,586		1	1 - 10 - 100 $0.50 1000 $0.42 10000 $0.37	Buy Now

FDU6N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDD6N50F Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04 Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	fdd6n50f fdu6n50f fdd6n50ftf fdd6n50ftm +3fdu6n50ftu failchild 6a04	PDF
FDD6N50 Contextual Info: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdd6n50/fdu6n50 fdd6n50	PDF
FDD6N50 Contextual Info: FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS on = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	fdd6n50 fdu6n50	PDF
FDD6N50TM Abstract: FDD6N50 Contextual Info: FDD6N50/ FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.	Original	fdd6n50/fdu6n50 fdd6n50tm fdd6n50	PDF
FDD6N50 Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	fdd6n50f fdu6n50f fdd6n50	PDF
Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	fdd6n50f fdu6n50f	PDF
FDD6N50TF Abstract: FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU Contextual Info: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdd6n50/fdu6n50 fdd6n50tf fdd6n50 fdd6n50tm +2fdu6n50 fdu6n50tu	PDF
FDD6N50FTM Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	fdd6n50f fdu6n50f fdd6n50ftm fdu6n50ftu +1fdd6n50ftf	PDF
interleaved Boost PFC Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50 Contextual Info: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is	Original	an-9066 interleaved boost pfc rg44 fda18n50 +7fdpf5n50ft fdpf12n50ft fdpf16n50t fda16n50 fdb12n50 fqa16n50 fdd6n50	PDF