FDD6N50F
Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04
Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar
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FDA20N50F
Contextual Info: UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS on = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.
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t 3866 mosfet
Abstract: FDA28N50 failchild MOSFET 3866 s
Contextual Info: UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155Ω Features Description • RDS on = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.
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FDA28N50F
Abstract: GS 069
Contextual Info: UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.
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FDD6N50FTM
Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF
Contextual Info: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar
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