F1004 Search Results

F100480

Abstract: Random Access Memory RAM
Contextual Info: F100480 16,384 x 1-Bit Static Random Access Memory FAIRCHILD A S ch lu m b e rge r C o m p a n y M em ory and H igh Speed L o g ic D escription T he F100480 is a 16,384-bit read/w rite Random Access M em ory R AM , organized 16,384 words by one b it per

Contextual Info: F100474 1024 x 4-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company F100K ECL Product Description The F100474 is a 4096-bit read/w rite Random Access M em ory R AM , organized 1024 w ords by fo u r bits per w ord. It is designed fo r high-speed scratchpad, control

Contextual Info: polyfet rf devices F1004 PATENTED GOLD METALIZED SILICON RF POWER MOSFET USEFUL FOR NARROW AND BROADBAND APPLICATIONS 80.0 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon DMOS designed specifically for RF applications.

Contextual Info: F100470 Fig. 4 Write Mode Timing Note Timing Diagram represents one solution which results in an optimum cycle time. Timing may be changed to fit various applications as long as the worst case limits are not violated. * 3-220

Contextual Info: F100480 16,384 x 1-Bit Static Random Access Memory FAIRCHILD A S chlum berger Com pany Memory and High Speed Logic Description The F100480 is a 16,384-bit read/write Random Access Memory RAM , organized 16,384 words by one bit per word and designed for high-speed scratchpad, control

Contextual Info: F100402 16 x 4-Bit Register File RAM FAIRCHILD A S chlu m b erger C om pany F100K E C L P ro d u ct Description C onnection Diagram s T h e F100402 is a h ig h -s p e e d 6 4 -b it R a n d o m A cce ss M e m o ry (R A M ) o rg a n iz e d as a 1 6 -w o rd b y 4 -b it a rray.

BIT 3195 G

Abstract: 1024x1 static ram
Contextual Info: f /\?r c h ?l B F100415 1024x1-Bit Static Random Access Memory A Schlumberger Company F100K ECL Product Connection Diagram Description The F100415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per w ord and designed fo r high-speed scratchpad, control

Contextual Info: F100416 256 x 4-Bit Programmable Read Only Memory F100K ECL Product Description The F100416 is a 1024-bit field Program m able Read O n ly M em ory PROM , organized 256 w ords by fo u r bits per w ord. It is designed fo r high-speed control, m apping, code conversion, and logic replacem ent. The device

Contextual Info: F100414 Typical Applicalion 4096-Word x n-Bit System 3-200

PM16C

Abstract: I00416
Contextual Info: F10416 / F100416 ECL ISOPLANAR MEMORY 2 5 6 x4 -B IT P R O G R A M M A B L E READ ONLY MEMORY DESCRIPTION - The F10416 and F100416 are fully decoded high speed 1024-bit j field Programmable Read Only Memories, organized 256 words by four bits. The FIQ^Wfi'

Contextual Info: F100402 16 X 4-Bit Register File RAM g A jg C H H ^ A Schlumberger Company F100K E C L Product DesertpUofi Connection Diagrams The F100402 is a high-speed 64-bit Random Access Memory (RAM) organized as a 16-word by 4-bit array. External iogic requirements are minimized by internal

F100415

Abstract: BIT 3195
Contextual Info: F100415 1024 x 1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company F100K ECL Product Description The F100415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed for high-speed scratchpad, control

Contextual Info: F100422 256 x 4-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The F100422 is a 1024-bit read/write Random Access Memory [RAM , organized 256 words by four bits per word. It is designed for high-speed scratchpad, control

Contextual Info: F100402 16 x 4-Bit Register File RAM F A IR C H IL D A Schlumberger Company 6 o 4 -c: Memory and High Speed Logic Connection Diagrams Description The F100402 is a high-speed 64-bit Random Access Memory (RAM) organized as a 16-word by 4-bit array. External logic requirements are minimized by internal

dj C

Contextual Info: F100474 1024 x 4-Bit Static Random Access Memory P /M R C H IL D A Schlumberger Company F100K ECL Product D escription The F100474 is a 4096-bit read/write Random Access Memory RAM , organized 1024 words by four bits per word. It is designed for high-speed scratchpad, control

Contextual Info: F100415 ECL ISOPLANAR MEMORY 10 2 4 x l-B IT FULLY DECODED RANDOM ACCESS MEMORY D E S C R IP T IO N - The F I 00415 is a 1024-bit Read/Write Random Access Memory or­ ganized 1024 words by one bit per word. Designed for high speed scratchpad, control and buffer storage applications The device is specified with a maximum read cycle time

Contextual Info: F100470 Fig. 4 Write Mode Timing N o te T im in g D iagram re p resents o ne s o lu tio n w h ich results in an o p tim u m c y c le tim e. T im in g m ay be ch an ge d to fit va rio us a p p lic a tio n s as lo ng as th e w o rst case lim its are n o t violated.

4096

Abstract: 4096-WORD
Contextual Info: F100414 Typical Applicalion 4096-Word x n-Bit System 3-200 This Material Copyrighted By Its Respective Manufacturer

F100K

Contextual Info: F100416 256 x 4-Bit Programmable Read Only Memory F100K ECL Product Description The F100416 is a 1024-bit field Program m able Read O n ly M em ory PROM , organized 256 words by fo u r bits per w ord. It is designed fo r high-speed control, m apping, code conversion, and logic replacem ent. The device

Contextual Info: ECL ISOPLANAR MEMORY F100414 256 x 1-BIT FULLY DECODED RANDOM ACCESS MEMORY F A IR C H IL D T E M P E R A T U R E AND VOLTAGE C OMPENSATED ECL G E N E R A L D E S C R IP T IO N - The F1 004 14 is a 2 5 6 -b it R ead /W rite Random Access Mem ory, organized 2 5 6 w o rd s by one bit. It has typical access tim e o f 7 ns and is de­

f1004

Contextual Info: F100474 1024 x 4-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The F100474 is a 4096-bit read/write Random Access Memory RAM , organized 1024 words by four bits per word. It is designed for high-speed scratchpad, control

Contextual Info: polyfet rf devices F1004 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1004

Contextual Info: polyfet rf devices F1004 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: F100415 1024 x 1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company f lev -11^ Memory and High Speed Logic Description The F100415 is a 1024-bit read/write Random Access M emory RAM , organized as 1024 words by one bit per word and designed fo r high-speed scratchpad,