EM01A Search Results

EM01

Abstract: EM01A EM01Z EM01ZZ
Contextual Info: BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER EM01Z Z - - - EM01A(Z) VOLTAGE RANGE: 200 - 600 V CURRENT: 1.0 A FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

EM01

Abstract: EM01A EM01Z
Contextual Info: BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER EM01Z Z -EM01A(Z) VOLTAGE RANGE: 200 - 600 V CURRENT: 1.0 A FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

EM1C

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z EM 1C
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM (A) Tj (°C)

EM1C

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM

Contextual Info: EM01Z-EM01A Plastic Silicon Rectifiers VOLTAGE RANGE: 200 - 600 V CURRENT: 1.0 A DO - 41 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

EM01A

Contextual Info: SANKEN ELECTRIC CO., LTD. EM01A １ Scope The present specifications shall apply to Sanken silicon diode, EM01A. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Commercial Frequency Rectification, etc Flammability: UL94V-0 (Equivalent)

RM 11B

Abstract: RM 10B RO 2 RO 2B Rectifier Diodes
Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount VRM V 400 IF (AV) (A) Values in parentheses are for the products with heatsinks 2.0 Package Surface-Mount (SJP) Part Number SJPM-H4 IFSM (A) 50Hz Single Half Sine Wave 45 Tj (°C) Tstg (°C) -40 to +150 VF (V) max 1.1

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Ta °C Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 1.0 45 –40 to +150 0.97 1.0 10 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

AM01

Abstract: AM01A AM01Z EM01 EM01A EM01Z FMM-22S FMM-24S FMM-26S MP2-202S
Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount VRM V 400 IF (AV) (A) Values in parentheses are for the products with heatsinks 2.0 Package Surface-Mount (SJP) Part Number SJPM-H4 IFSM (A) 50Hz Single Half Sine Wave 45 Tj (°C) Tstg (°C) -40 to +150 VF (V) max 1.1

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM max

RBV-406M

Abstract: RM1Z 52 RBV-606 RBV-606H AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

RM1Z 12

Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

fmlg12

Abstract: RB40 N
Contextual Info: 3SE D SANKEN ELECTRIC CO LTD Rectifier Diodes i. 7^07m 0DGG7*ì3 fl tm S A K J ~ fiO i-*0\ EVrm:* 0~ 1500V EIo:0.5~ 3.0A S F P M /A M /E M /R M /R O A b s o lu te M a x im u m R a tin g s R a tin g / Vrm V) lo (A) Ifsm (A) Tj CC) Tstg CC) 50Hz Half Sine

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

R02Z

Abstract: SG5T RM11C SANKEN
Contextual Info: iBBWiMiHSNieipeiBiie i IODES mm • RECTIFIER DIODES V rm lo IpSM Vf V) (A) (A) Max. @ lF (V) SFPM-52 200 SFPM-54 400 SFPM-62 200 SFPM-64 0.9 30 1.0 1.0 45 0.98 ¡R (A) Vrm lo Ifsm VF ,<V> (A) (A) Max. @ lF Type No. (H A ) Max. (V) RM4Y 100 200 RM 4Z 200

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)