ECL101K Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM101510 Product Preview 1 Megabit Static Random Access Memories with ECL i/O ECL101K Levels ECL 100K @ - 5.2 V Are Required T h e M C M 1 0 1 5 1 0 is a 1 ,0 4 8 ,5 7 6 bit static random access m em ory organized as

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

conventional bicmos

Contextual Info: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization

101490

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCEMOS ECL static random access memo­

Contextual Info: integ rated Device Technology, Inc. PRELIMINARY IDT10496LL IDT100496LL IDT101496LL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs

100A484

Abstract: 101A48 IDT10484 ECL-10K IDT100A4M 4Kx4 SRAM
Contextual Info: r — I N T E G R A T E D DE VICE 3ÔE D • 4 Ô 2 S771 D Ü 0 b071 4 DÉ IDT 3 > '0 < Z HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A434 IDT101A484 FEATURES; DESCRIPTION: • • ■ • • • • • The IDT10A484,1DT100A484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

Contextual Info: Integrated Device Technology» Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT SRAM iotÎÎSÎm IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit high-speed BiCEMOS ECL static random access memo­

8002 1035

Abstract: IHb si DSC-8002 2764-2 27b4 ECL-10K IDT100494 IDT101494 IDT10494 ecl 10K sram 16 bit
Contextual Info: Data Book B, Section 5.4, Page 1 IDT10/100/101494 In te g ra te d D evice T echnology, In c. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit

l00a

Abstract: ECL-10K
Contextual Info: In tegrated D e v ice T ech n o lo gy, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • The ID T 10A 474, ID T 1 0 0 A 4 7 4 and 1 0 1A 474 are 4,096-bit

Contextual Info: Integrated Device Technology, inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • The IDT10474, IDT100474 and 101474 are 4,096-bit high­ speed BiCEMOS ECL static random access memories

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization • Address access time: 5/7/8/10/15 ns • Low power dissipation: 600mW (typ.)

100A484

Abstract: 100484 Z623 I60S4 10A484
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels

DSC40

Contextual Info: I N T E G R A T E » D E VI CE 3ÛE D • M Ö 2 S 77 1 D D O b G b E _ HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM 3 Bi IDT ~t - 4 G ~ £ 2 , - 0 3 PRELIMINARY IDT10484 IDT100484 IDT101484 FEATURES: DESCRIPTION: • • • ■ ■

Contextual Info: Data Book B, Section 5.4, Page 1 IDT10/100/101494 Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit

TAA 840

Contextual Info: gggffi'N. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM |jd £ / Integrated Device Technology, Inc. PRELIMINARY IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns

101490

Abstract: datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16Kx 1-BIT SRAM IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • • • • • • • The IDT10480, IDT100480 and IDT101480 are 16,384-bit high-speed BiCEMOS ECL static random access memo­

Contextual Info: Integrated Device Technology, lac. SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs • Balanced Read/Write cycle time: 13/15ns • Access time: 10/12 ns (max.)

MA 2810

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM FEATURES: • • • • • • • • 32,768-words x 9-bit organization Address access time: 8/10/12/15 Wide word for reduced address loading Guaranteed Output Hold time

se 130 n

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.)

101490

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrateti D evice Technology, In c. FEATURES: • • • • • • • 65,536-words x 1 -bit organization Address access tim e: 8/10/12/15 Low power dissipation: 420m W (typ.)

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • T h e ID T 1 047 4, ID T 10 0 4 7 4 and 1 0 1 4 7 4 are 4,096-bit high­

Contextual Info: ADVANCE INFORMATION IDT10498 IDT100498 IDT101498 HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT with CONDITIONAL WRITE FEATURES: • • • • • ■ ■ 16,384-words x 4 -b il organization Address access time: 12/15ns Read Data output latch lor extended hold time

IHb si

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time