DSK9J01 Search Results
DSK9J01 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DSK9J01P0L | Panasonic Electronic Components | Discrete Semiconductor Products - Transistors - JFETs - JFET N-CH 30MA 125MW SSMINI3 | Original | 483.68KB |
DSK9J01 Price and Stock
ROHM Semiconductor DSK9J01Q0LDSK9J01Q0L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DSK9J01Q0L | 651,000 | 7,595 |
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DSK9J01Q0L | 651,000 | 1 |
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Panasonic Electronic Components DSK9J01Q0LDSK9J01Q0L N-CHANNEL JFET TRANSISTOR, IDSS 2 - 6.5MA, 3-PIN SSMINI3 F3 B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DSK9J01Q0L | Bulk | 100 |
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Panasonic Electronic Components DSK9J01P0LDSK9J01P0L N-CHANNEL JFET TRANSISTOR, IDSS 1 - 3MA, 3-PIN SSMINI3 F3 B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DSK9J01P0L | Bulk | 20 |
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Get Quote | ||||||
DSK9J01 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking code B6p
Abstract: DSK9J01 DSK5J01
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Original |
2002/95/ecdsk9j01dsk5j01125asures+1 | |
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Contextual Info: DSK9J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor DSK5J01 in SSMini3 type package • Features Package High gate-drain voltage source open VGDO Contributes to miniaturization of sets, reduction of component count. |
Original |
dsk9j01dsk5j01 | |
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Contextual Info: Doc No. TT4-EA-12742 Revision. 2 Product Standards Junction FETs DSK9J010L DSK9J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor DSK5J01 in SSMini3 type package 1.6 0.26 0.13 3 • Features 0.85 1.6 |
Original |
tt4-ea-12742dsk9j01dsk5j01ul-94 | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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Original |
respons39o-220d-a1ma26p02maz3082j+15 | |
DSK5J01
Abstract: DSK9J01 marking b6r marking code b6
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Original |
2002/95/ecdsk5j01dsk9j01marking b6r+1 | |
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Contextual Info: DSK5J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor • Features Package High gate-drain voltage source open VGDO Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
Original |
dsk5j01 | |
MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
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Original |
a000021emn864779mn88472an12947a+7 |