DSK5J01 Search Results

Contextual Info: Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J010L DSK5J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor DSK2J01 in SMini3 type package 2.0 0.3 • Features 0.13 3 1.25 2.1  High gate-drain Voltage Source open VGDO

marking code B6p

Abstract: DSK9J01 DSK5J01
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSK9J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor DSK5J01 in SSMini3 type package • Features  Package  High gate-drain voltage (source open) VGDO

DSK5J01

Abstract: DSK9J01 marking b6r marking code b6
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSK5J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor • Features  Package  High gate-drain voltage (source open) VGDO  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DSK5J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor • Features  Package  High gate-drain voltage source open VGDO  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package

Contextual Info: DSK9J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor DSK5J01 in SSMini3 type package • Features  Package  High gate-drain voltage source open VGDO  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: Doc No. TT4-EA-12742 Revision. 2 Product Standards Junction FETs DSK9J010L DSK9J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor DSK5J01 in SSMini3 type package 1.6 0.26 0.13 3 • Features 0.85 1.6

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.