DSE119 Search Results

Contextual Info: □IXYS DSE119-06AS Preliminary Data 20 A ^FAVM Fast Recovery Epitaxial Diode FRED vrRRM 600 V t 35 ns TO-263 AA V v RSM V v RRM 600V 600V Symbol A Type Test Conditions 25 20 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 110 A A TVJ = 150°C

DSE112-06

Abstract: DSE112 06 DSE119
Contextual Info: OIXYS Fast Recovery Epitaxial Diode FRED DSE119 VRRM = 600 V Ì ~ 20 A trr = 35 ns v V 600 A f\ l \ Vrrm V 600 RSM favm Type TO-263 AA C NC t DSE119-06 AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol ^FRMS Test Conditions ~^"vj ~ Tvjm

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600

DSE119

Abstract: 806A TR 0420
Contextual Info: ÖIXYS DSEI 8 Iravm = 8 A Vrrm = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED v RSM ^ — s. V t rrm TO-263 AA Type D SE ,8-°6AS V V 640 640 600 600 Symbol ^FRMS W m ^FRM ^FSH l2t DSEI 8-06A DSEI 8-06AS C (TAB) Test Conditions Maximum Ratings

DSE112-12

Abstract: DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA
Contextual Info: Fast Recovery Epitaxial Diodes FRED Ifav = 8 - 5 8 2 A Type *FSM TVjm = 150°C VJM A ► New 10 ms 45°C A Package style F max. "^VJM = typ. typ. T vj=25°C TVJ A ns 150°C A 100-C A/jis K/W 64 2.5 50 100 2.0 62 100 1.6 78 35 100 1.6 62 40 100 1.6 78 200

Contextual Info: n ix Y S Fast Recovery Epitaxial Diode FRED v V rrm V V ¥ rsm 640 640 DSEI8 IFAVM vrRRM t. A T yp e 600 600 / \ \ C 8A 600 V 35 ns TO-220 AC DSEI 8-06A m DSEI 8-06A DSEI 8-06AS A = Anode, C = Cathode TO-263 AAk DSEI 8-06AS S ym bo l T e s t C o n d itio n s