DSA26 Search Results

dsa26c

Contextual Info: Ordering number:EN634D DSA26 Diffused Junction Type Silicon Diode 2.6A Power Rectifier Features Package Dimensions • Plastic molded type. · High reliability attained by glass passivation. · Peak reverse voltage : VRM=100 to 400V · Average rectified current : IO=2.6A.

DSA26C

Abstract: DSA26G D218 DSA26
Contextual Info: Ordering number : ENN634E DSA26 Diffused Junction Type Silicon Diode DSA26 2.6A Power Rectifier Features • • • Plastic molded type. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.6A. unit : mm

DSA26C

Abstract: 1086A DSA26G D088 DSA26 TA-2803 8050H
Contextual Info: 注文コード No. N 6 3 4 E DSA26 No. N 6 3 4 E 41000 ＊ 半導体ニューズ No.634D ’ 86 データブックダイオード・サイリスタ・センサ編 No.634C）とさしかえてください。 DSA26 特長 シリコン拡散接合形 2.6A 電源整流素子

DSA26C

Abstract: D218 DSA26 DSA26G
Contextual Info: Ordering number : ENN634E DSA26 Diffused Junction Type Silicon Diode DSA26 2.6A Power Rectifier Features • • • Plastic molded type. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.6A. unit : mm

Contextual Info: Ordering number : ENN634E DSA26 Diffused Junction Type Silicon Diode DSA26 2.6A Power Rectifier Features • • • Plastic molded type. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.6A. unit : mm

DO-151

Abstract: DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x
Contextual Info: DIODES, THYRISTORS, SENSO High-speed Switching Diodes Plastic-package Diodes Device l0 A Vr <V) Package type 0.10 80 MCP2 DCF010 0,10 so DCG010 0.10 80 D S E 01 0* Features Device Single DCA015 MCP Com m on anode DCB015 MCP Com m on cathode DSA015 10 (A)

Contextual Info: CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF Complete VMEbus address and data interface, except buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transferrate Selectable atomic or decoupled mode Programmable A32 and A24 slave image bases

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

4005G

Abstract: UF4001G UF4007G 4002G
Contextual Info: UF4001G THRU UF4007G Glass Passivated Ultra Fast Recovery Rectifier YENYO Voltage Range 50 to 1000 V Current 1.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

7808

Contextual Info: Cover Case HIF3B Series against EMI (Electromagnetic Interference) •Features 1. Electromagnetic Shielding Effect This product enhances shielding effects with a metallic cover over the ribbon cable connector (HIF3B series). 2. Screw Locking Mechanism The locking mechanism is designed in a stubborn and

1S553T-HP

Abstract: 1s553 1S553T GSA30B SVC321 GSA30E svc203cp DSK10L SVC203 DS135E
Contextual Info: SANYO SEMICOND UCT OR CORP DTE D | T -0*1-01 DnDSSin 3 | T-Ol-Oi VARACTO R DIODES *; Dual type It v Rm Package ' ' 32 20 16 Plastic Coaxial 1S553T-HP FM AM SVC321 Plastic SVC321SP Plastic (SP) Electronic SVC333 Tuning FM Electronic Plastic SVC201SP Plastic(PCP)

DSA12J

Abstract: DSA12L DSA12TB DSA12TC DSA12TE DSA12TG DSA12TJ DSA12TL DSA17B DSA17C
Contextual Info: S S S S S 90A 90A 90A 90A , 19F a o o 89 J 89 J 89H 89H 8 9H O Q 800 1000 100 200 J.U .Û Û Û Èë s s s s s o o o o o en oo co co co 600 800 1000 100 200 Ss LO LT O O O «3 O O O O O O o o o o o eo > h o ^ »o o o o o o o o o o o o ® O tL.fc.Cl-Ci.tl_

mx 362-0

Abstract: EL 817 c221 mx c346 diode MX C322 MX C339 DSA25 ram 6164 mv silicon c320 6164 ram EL 817 c336
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8832 STN RGB - 384 output column driver Preliminary specification 2002 Aug 16 Philips Semiconductors Preliminary specification STN RGB - 384 output column driver CONTENTS PCF8832 8.2 8.3 8.4 8.5 8.6 Set Y-address Set X-address

Contextual Info: S A f/Y O R e c t if ie r s a | c Genera 1 Average output current A purpose ( N o . 1) rect if iei-s Absolute Maximum Ratings/Ta=25t Type No. IFSM(A) VRM(V) 100-400 45 600-1000 30 100-600 45 800-1000 30 DS135 100-400 50 DSA10D 600-1000 30 DSM10D 200-600 25

HIF3B

Abstract: 7808 HIF3ba connector electromagnetic shielding HIF3-10CVFA HIF3-16CVFA HIF3-20CVFA HIF3-26CVFA HIF3-30CVFA HIF3-34CVFA
Contextual Info: Cover HIF3B Series against EMI (Electromagnetic Interference) •Features 1. Electromagnetic Shielding Effect This product enhances shielding effects with a metallic cover over the ribbon cable connector (HIF3B series). ■Applications Peripheral and termination equipment, control machines, measuring

DSA12J

Abstract: DSA12L DSA12TB DSA12TC DSA12TE DSA12TG DSA12TJ DSA12TL DSA17B DSA17C
Contextual Info: 90A 90A 90A 90A , 19F S S S S S 89 J 89 J 89H 89H 8 9H O Q a o o 800 1000 100 200 J.U .Û Û Û Èë s s s s s o o o o o en oo co co co 600 800 1000 100 200 Ss LO LT O O O «3 O O O O O O o o o o o eo > h o ^ »o o o o o o o o o o o o ® O O O O Q tL.fc.Cl-Ci.tl_

CL 6807

Abstract: 7808 34D254
Contextual Info: Cover Case HIF3B Series against EMI (Electromagnetic Interference) •Features 1. Electromagnetic Shielding Effect This product enhances shielding effects with a metallic cover over the ribbon cable connector (HIF3B series). ■Applications Peripheral and termination equipment, control machines, measuring

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

DDA010

Abstract: H17j KDS 1M
Contextual Info: NEWBRIDGE MICROSYSTEMS SSE D • bSäfllOl 0 D G 0 7 3 1 3 ■ CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF T -5 2 -3 3 -S 5 Complete VMEbus address and data Interface, exeept buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

VAM-03

Abstract: DDA010 VAM03 TL31 LA 4108 KDS 5.000 VAM02 ka bs 89 TL46 WO 8 94 00 KDS 8.000
Contextual Info: NEWBRIDGE MICROSYSTEMS SSE D • bSäfllOl 0 D G 0 7 3 1 3 ■ CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF T-52-33-S5 Complete VMEbus address and data Interface, exeept buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transfer rate

D16 lm s2

Contextual Info: TM Œ U FEBRUARY 1990 CA91C015 Ïk VMEbus DATA ADDRESS REGISTER FILE DARF Complete VMEbus address and data Interface, except buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transfer rate Selectable atomic or decoupled mode Programmable A32 and A24 slave Image bases