DS0415 Search Results

Contextual Info: Flexibility & Innovation … DS0415_01 12.09.02 DATA S HEET TSF0864-01 864 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE 3X3 MM SMD PRODUCT F EATURES: Ø LOW LOSS 1.25±0.25 Ø HIGH R EJECTIONS Ø SMALL SMD PACKAGE 1.50±0.15 3 4 2 5 1 6 0.95±0.15 CONTACT:

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

T491C

Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Contextual Info: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

j561

Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Contextual Info: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

J182 transistor

Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

RM73B2B

Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
Contextual Info: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

100B100JW500X

Abstract: AGR09070EF JESD22-C101A 100B100JW500
Contextual Info: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

AGR09090EF

Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR09045E

Abstract: AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222
Contextual Info: Preliminary Data Sheet April 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR09085EF

Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Contextual Info: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

c5047

Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

JESD22-C101A

Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet
Contextual Info: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

Contextual Info: Preliminary Data Sheet May 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular