DQ023 Search Results

BCX71RG

Abstract: BCW61RB bcw61rd
Contextual Info: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type

R001

Abstract: schottkey 1N3909-13 G0003 G0006 G0009 INI199-1206
Contextual Info: SOLID STATE DEVICES INC 12E D |fl3bh011 DQ023.m 0 | T-ei-ofr .Geometry Popular Part Numbers RECTIFIERS, STANDARD RECOVERY GÛÛOA GOOOC GOOOE RECTIFIERS, GOOOB GOOOD GOOOM RECTIFIERS, G0003 G0009 GOOOJ G0006 G0007 GOOOM GOOOS 1N4245-49 1N5415-20 I N I 199-1206

P 32240

Contextual Info: QSFCT3240, 3244, 32240, 32244 PRELIMINARY 3.3 Volt CMOS 8-BÌt Q QS74FCT3240 QS74FCT3244 Buffers/Line Drivers JgÏ Ï S S J Î FEATURES/BENEFITS • • • • • Pin and function compatible to the 74F240/4 74LVT240/4 and 74FCT240T/4T Available in SOIC and QSOP

1553 bus

Abstract: HM-65664 80C31M
Contextual Info: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

MT29F8G08ABABA

Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
Contextual Info: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status

Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Westinghouse thyristor

Abstract: P214PH06FJ0
Contextual Info: WESTCODE SEMICONDUCTORS 3TE S • 0002303 S ■ IdESB j" */9 Technical Publication W ESTCO D E $ SEMICONDUCTORS TP214P Issue 1 November 1984 Inverter Grade Stud-Base Thyristor Type P214P 195 amperes average: up to 800 volts V rrm IV Drm R a t i n g s Maximum values at 125°C Tj unless stated otherwise

vlga

Abstract: MT29F64G08 256Gb NAND
Contextual Info: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB

WED8L24258V

Contextual Info: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

MT29F16G08ABACA

Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
Contextual Info: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous

MT29F16G08ABACA

Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
Contextual Info: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous

WED8L24513V

Abstract: 2106XL
Contextual Info: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs

AD7545

Abstract: AD7545GLCWP AD7545GLN AD7545JCWP AD7545JN AD7545KN AD7545LCWP AD7545LN GL RESISTOR ARRAY AD7545BQ
Contextual Info: MAXIM INTEGR ATE D PRODUCTS 13E D • y Sfl7bbSl DDG23Gfl 1 n y i x i y n CMOS 12-B it B uffered M ultiplying DAC _ General Description _ T ' S / - 0 9 £ ¡2- The AD7545 is a 12-bit CMOS m ultiplying digital-toanalog converter DAC with internal data latches.

512kx8

Contextual Info: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single

EDI8L24128C

Contextual Info: White Electronic Designs EDI8L24128C 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION 128Kx24 bit CMOS Static Random Access Memory Array Fast Access Times: 12 and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks

mt29f128g08

Abstract: MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128
Contextual Info: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB

MT29F16G08ABACA

Abstract: MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F32G08AFACA MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC
Contextual Info: Micron Confidential and Proprietary Advance‡ 16Gb, 32Gb Asynchronous/Synchronous NAND Features NAND Flash Memory • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane

DSP5630x

Abstract: p 602 EDI8L24129V
Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

EDI8L24128C

Contextual Info: EDI8L24128C White Electronic Designs 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION  128Kx24 bit CMOS Static The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 12 to 15ns access times, x24

Contextual Info: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V

Contextual Info: THYRISTOR MODULE n o n -ISOLATED TYPE PWB60A P W B 6 0 A is a Thyristor module suitable for low voltage, 3 phase rectifier applications. • IF(avj:60A (each device) • High Surge Current 1800 A (60Hz) • Easy Construction • Non-isolated. Mounting base as common Anode terminal

Contextual Info: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V