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    MagnaChip Semiconductor Ltd

    MagnaChip Semiconductor Ltd DL2G50SH6N

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    DL2G50SH6N

    Abstract: DIODE 10V 10mA DL2G50SH6N, IGBT Module,
    Contextual Info: DL2G50SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		DL2G50SH6N Fig14. Fig15. DL2G50SH6N DIODE 10V 10mA DL2G50SH6N, IGBT Module, PDF