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DH50037 Datasheets (1)

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Temex

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
DH50037		Temex	MICROWAVE SILICON COMPONENTS	Original	PDF	656.65KB	56

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DH50037 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Surface M o u n t sw itch ing and attenuator Silicon PIN diodes Switch application Characteristics @ Ta=+25° C O F= 120MHz Q max II conditions Type DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 V min. 30 35 35 50 100 100 200 200	OCR Scan	dh50037 dh50051 dh50058 dh50053 +6dh50103 dh50109 dh50203 dh50209 dh80051 120mhz	PDF
Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	eh50072 eh50073 eh50074 eh50075 +6eh50076 eh50077 eh50101 eh50102 eh50103 eh50104	PDF
EH76150 die Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312 Contextual Info: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.	Original	esa/scc5512/016 dh252 dh256 dh292 +8dh267 eh76150 die all diodes ratings step recovery diode dh252 temex dh315 dh303 dh324 dh312	PDF
dh50076 Abstract: EH50052 M208 Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	eh50033 eh50034 eh50035 eh50036 +8eh50037 eh50052 eh50053 eh50054 eh50055 eh50056 dh50076 m208	PDF
dh50076 Abstract: DH50037 M208 Contextual Info: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	eh50033 eh50034 eh50035 eh50036 +9eh50037 eh50052 eh50053 eh50054 eh50055 eh50056 dh50076 dh50037 m208	PDF
sqm1150 Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294 Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.	Original	sqm1150 smd diode f54 sqm1250 dh60034 +6srd dh294 bh16 transistor step recovery diode dh252 temex dh252 m208 b1 dh294	PDF