DH50076 Search Results

Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

EH76150 die

Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312
Contextual Info: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.

dh50076

Abstract: EH50052 M208
Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

dh50076

Abstract: DH50037 M208
Contextual Info: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

sqm1150

Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.