D1002 Search Results

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2007 - Rev 03-May-07 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

D1002-BD

Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: nil Vrr r = mi TetraFET D1002UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W - 28V -175 M H z SINGLE ENDED FEATURES 4 _U • SIMPLIFIED AMPLIFIER DESIGN f T I J • SUITABLE FOR BROAD BAND APPLICATIONS

Sumida DATE CODE

Abstract: AD20MSP930 AN1002 SD10028 ANALOG DEVICES COUNTRY OF ORIGIN sumida transformer
Contextual Info: D10028 D10028 DSL Isolation Transformer PRODUCT COMPLIANCE FEATURES • For top-performance in ADSL modem line interfaces. • UL/C- UL recognized file number: • Drop in replacement for EP13. • BABT certificate of recognition: • Total Harmonic Distortion rated -94.5dB, typ. between

sumida 455

Abstract: Sumida DATE CODE sumida if transformer AN1002 SD10029 MOTOROLA AN1002 455 khz if transformer
Contextual Info: D10029 D10029 DSL Isolation Transformer PRODUCT COMPLIANCE FEATURES • For top-performance in ADSL modem line interfaces. • UL/C- UL recognized file number: • Drop in replacement for EP13. • BABT certificate of recognition: • Total Harmonic Distortion rated -89.5dB, typ. between

Contextual Info: bQE » • Ô1331Û7 0ÜDGT15 ITT ■ S M L B 'T'-l>l-Z£> SENELAB PLC SEMELAB D1002UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 40W -28V -175M H z SINGLE ENDED MECHANICAL DATA D im ension s FEATURES • SIMPLIFIED AMPLIFIER DESIGN

D1002

Abstract: mmic distributed amplifier 84-1LMI XD1002
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

22SWG

Abstract: b649 D1002UK
Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

b649

Abstract: HF power amplifier D1001UK D1002UK D1001UK
Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

Sumida DATE CODE

Abstract: AN1002 D10025 SD10025 30kHz-200kHz
Contextual Info: D10025 D10025 DSL Isolation Transformer PRODUCT COMPLIANCE FEATURES • For top-performance in HDSL modem line interfaces. • UL/C- UL recognized file number: • Drop in replacement for EP13. • BABT certificate of recognition: • Total Harmonic Distortion rated -93.3dB, typ. between

mmic distributed amplifier

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

D1002-BD

Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1 152.01
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

D1002UK

Contextual Info: TetraFET D1002UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: mi TetraFET Etti llll SEME D1002UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W -2 8 V -1 7 5 M H z SINGLE ENDED C ▼ * F FEATURES ▼ ▼ • SIMPLIFIED AMPLIFIER DESIGN A A H K • SUITABLE FOR BROAD BAND APPLICATIONS

D1002UK

Abstract: b649
Contextual Info: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1002UK.03 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

D1002UK

Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 D1002 Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point

Contextual Info: 3 Scotch-Weld Urethane Adhesive DP-620NS, Black Technical Data June, 2003 Product Description 3M™ Scotch-Weld™ Urethane Adhesive DP-620NS is a black, long working time, two-component polyurethane. Formulated as 1:1 ratio liquids. With the squeeze of

2SB886

Abstract: 2SD1196 ITR08
Contextual Info: Ordering number:ENN928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2010C [2SB886/2SD1196]

Contextual Info: — DUAL SOLENOID/MOTOR DRIVER PXJLSE-WIDTH MODULATED CURRENT CONTROL Using PWM to minimize power dissipation and maximize load efficiency, the UDN2962W dual driver is recommended for impact printer solenoids and stepper motors. It is comprised of two source/

2SJ448

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. PART NUMBER PACKAGE 2SJ448 Isolated TO-220