CY7C1021BV33 Search Results

CY7C1021BV

Abstract: CY7C1021BV33
Contextual Info: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BV33

Abstract: CY7C1021CV33
Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

15BAI

Contextual Info: 33 CY7C1021BV33 PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021CV33-10ZC

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BV33

Abstract: CY7C1021CV33
Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

CY7C1021CV33-15ZC

Contextual Info: 021CV33 CY7C1021CV33 PRELIMINARY 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, 15ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Automatic power-down when deselected

401745

Abstract: cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 000505 VERSION 2.0 November, 2000 1 Meg Fast Asynchronous SRAM R52FD-3 Technology, Fab 4 CY7C1021BV33 CY7C1019BV33 64K x 16 Static RAM 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

CY7C1021BV33

Abstract: CY7C1021CV33 TSOP 48 thermal resistance
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

CY7C1021CV33-10ZSXA

Abstract: AN1064 CY7C1021BV33 CY7C1021CV33
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM

CY7C1021CV33-15VXC

Abstract: CY7C1021BV33 CY7C1021CV33 CY7C1021CV33-12ZXC CY7C1021CV33-12ZXI CY7C1021CV33-15ZXC TSOP 48 thermal resistance
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

cy7c1021cv33

Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM

UM62256EM-70LL

Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
Contextual Info: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B

CYC199

Abstract: sram cross reference CYPRESS SAMSUNG CROSS REFERENCE W24257AK Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference
Contextual Info: High Speed SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Pins Time (ns) (bits) Package W2465AJ 64K 8Kx8 5V 12 28 J:SOJ W24129AJ W24L257AJ,Q 128K 256K 16Kx8 32Kx8 5V 3.3V 12 12, 15 28 28 J:SOJ J:SOJ/Q:STSOP W24257AK,J,Q,S 256K 32Kx8

CY7C1021CV33-10ZC

Abstract: CY7C1021BV33 CY7C1021CV33 TSOP 48 thermal resistance TSOP 48 thermal resistance junction to case CY7C1021CV33-10VXI FBGA PACKAGE thermal resistance
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

CY7C1021CV33-15VXC

Abstract: CY7C1021CV33-12ZXC CY7C1021CV33-15ZXC TSOP 86 Package AN1064 CY7C1021BV33 CY7C1021CV33
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM

CY7C1338-100AXC

Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Contextual Info: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

WINBOND cross reference

Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
Contextual Info: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X