CY7C1019 Search Results

cy7c1019dv

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

CY7C1019

Contextual Info: 1CY 7C10 19 ADVANCED INFORMATION CY7C1019 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

CY7C1019B

Abstract: CY7C1019D CY7C1019D-10VXI CY7C1019D-10ZSXI
Contextual Info: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an

cy7c1019d-10

Abstract: 30759
Contextual Info: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • • • • • — ISB2 = 3 mA

Contextual Info: CY7C1019D PRELIMINARY 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power The CY7C1019D is a high-performance CMOS static RAM

Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

CY7C1019B

Abstract: CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15
Contextual Info: C1019V33 CY7C1019B 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power

CY7C1019

Abstract: CY7C1019BN CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC
Contextual Info: CY7C1019BN 128K x 8 Static RAM Features Functional Description • High speed The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. This

CY7C1019B-15VC

Abstract: CY7C1019 CY7C10191B CY7C1019B CY7C1019B-12VC CY7C1019B-12ZC CY7C1019B-12ZXC CY7C1019B-15ZXC
Contextual Info: CY7C1019B 128K x 8 Static RAM Features expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and tri-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

CY7C1019

Abstract: CY7C1019-10VC CY7C1019-12VC CY7C1019L-10VC
Contextual Info: PRELIMINARY CY7C1019 128K x 8 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

cy7c1019d-10

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

Contextual Info: CY7C1019CV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■

Contextual Info: / CYPRESS ADVANCED INFORMATION CY7C1019 128Kx 8 Static RAM Features Functional D escription • High speed T h e C Y 7C 1019 is a h ig h -p e rfo rm an ce C M O S static R A M o rg a n iz e d as 131,072 w o rd s by 8 bits. E asy m em o ry e x p a n sio n is

CY7C1018V33

Abstract: CY7C1019V33
Contextual Info: 019V33 CY7C1018V33 CY7C1019V33 128K x 8 Static RAM Features pins I/O0 through I/O7 is then written into the location specified on the address pins (A0 through A16). • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout

Contextual Info: CY7C1019V33 CY7C1019B/ CY7C10191B 128K x 8 Static RAM Features • High speed — tAA = 10, 12, 15 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

cy7c1019d

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description The CY7C1019D [1] is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW

Contextual Info: 3 CY7C1019BV33 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33

Contextual Info: CY7C1019BN 128K x 8 Static RAM Features Functional Description • High speed The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. This

Contextual Info: fax id: 1050 PRELIMINARY CY7C1019 128K x 8 Static RAM Features — t AA = 1 0 n s Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. Data on the eight I/O pins (I/Oq through I/O 7 ) is then written into the location speci­

CY7C1019V33

Abstract: CY7C1019V33-10VC CY7C1019V33L-10VC
Contextual Info: 33 PRELIMINARY CY7C1019V33 128K x 8 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

CY7C1018V33

Abstract: CY7C1019V33
Contextual Info: *= CY7C1018V33 CY7C1019V33 C Y PR ESS 128K x 8 Static RAM pins l/O0 through l/0 7 is then written into the location speci­ fied on the address pins (A q through A-ie)- Features • High speed Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write

CY7C1019

Abstract: 9l15 OTE14
Contextual Info: fax id: 1050 : ., _ Z = ! ! L ^ A : M ; M : ; ; r n n •■^«««^m Sm SSSm äm r s I s CY7C1019 P R E L IM IN A R Y |M — 128K x 8 Static RAM Features — tAA = 1 0 n s W riting to the device is accomplished by taking chip enable (CE and write enable (WE) inputs LOW. Data on the eight I/O