CEP10 Search Results

Contextual Info: POWER CUSTOM MAGNETICS • Industry standard packages optimized for customer specific needs • SMPS IC manufacturers support Typical Core Power Handling Capabilities CEP Core CEP10 shown EE Core EE16 shown EFD Core EFDD15 shown EP Core EP13 shown NOTES: 1. Values shown are typical and can be modified depending upon core material, wire gauge, and cooling method s used.

CEP10N4

Contextual Info: CEP10N4/CEB10N4 Sep. 2002 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 450V , 10A , RDS ON =700m Ω VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D

ADSL splitter

Abstract: CEP1010 SMD Transformer SD0052
Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP1010 ◆ Product Description ・15.1x12.4mm Max. L×W ,10.9mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL Customer Premises Equipment and splitter. ・RoHS Compliance. ◆ Dimensions (mm)

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

CEP10N4

Abstract: CEB10N4 CEF10N4 CEI10N4 CEF10
Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).

S945

Contextual Info: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: CEP1012L/CEB1012L 4 N-Channel Enhancement Mode Field Transistor FEATURES D 120V , 10A , RDS ON =120mΩ @VGS=5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S G D S CEB SERIES

Contextual Info: CEP1012/CEB1012 March 1998 N-Channel Enhancement Mode Field Transistor 4 FEATURES D 120V , 10A , RDS ON =120m Ω @VGS=10V Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

CEP10N4

Abstract: CEB10N4 CEF10N4 CEI10N4 412ID
Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).

A900R

Abstract: OA90 A900-R cd 106
Contextual Info: March 1998 N-Channel Enhancement Mode Field Transistor FEATURES • 12 0 V , 10 A , R ds on =120mQ @ V g s =1 0V • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.

C3SS1-10B-20

Abstract: CE4T-10R-11 CE4T-10R-02 CP1-10G-11 10R-02 CL-513G CP3-10R-11 CE4P-10R-02 CL-513R CL-513Y
Contextual Info: 1037-2012:QuarkCatalogTempNew 9/6/12 5:27 PM Page 1037 12 Compact Range of Operators and Pilot Lights ᭤ Complete Assemblies ᭤ Operator Style Identical to Modular Range ᭤ 22 mm Mounting Size ᭤ Finger-Safe Screw Terminals RoHS ᭤ IP66, IP67 and IP69K

CL652S

Abstract: CL-652S lm 2004 MR 3493 CL-652S-8WJ-SD CL-652 CL-652S-8WK-SD CL-650S
Contextual Info: Press Release September 28, 2004 High Power with an Ultra-High-Efficiency Package and New Elements Development and Mass Production of the CL-652S Series of White Power LED Lamps for General Lighting Featuring the World's Highest Luminous Efficiency After developing the white power LED lamp series CL-650S for general lighting and entering the market of general

connettori

Contextual Info: MAS-CON d Serie CEP/CTP 100 f Série CEP/CTP 100 u Series CEP/CTP 100 i Serie CEP/CTP 100 d 2- bis 12- and 14-polige End- und Durchgangs-Federleisten mit Seitenpolarisierung im Raster 2,54 mm, Abdeckkappen f Connecteurs d’Extrémités et Traversants avec polarisation au pas de 2,54 mm

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

CE100F28

Contextual Info: MAS-CON Steckverbinder in der Schneid-/Klemmtechnik Isolationsverdrängungs Prinzip IDC – für eine schnelle, sichere und rationelle Verbindungstechnik Mass terminated connector system reduces installed costs due to preloaded IDC contacts 1 Federleisten

mas-con

Abstract: cep100 CEP100F24 CEP100F28 mascon CONNECTOR CTP100F24
Contextual Info: Mas-Con .100” 2.54 mm End and Through Connectors Available in 2-28 Circuits with Optional Cover Series CEP/CTP Polarized Connectors Dimensions b Through a Snap-on Covers EC End Snap-on Covers TC Strain Relief Combination Cover SCC Dimensions - Dual Dims

Contextual Info: PRELIMINARY N-Channel Enhancement Mode Field Transistor FEATURES • 1 2 0 V , 1 0 A , R ds on =120rrQ @V gs=5V • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES

FZT851

Abstract: FZT853 DS-310
Contextual Info: FZT851 SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS _ FZT853 PRO V ISIO N A L DATA FEATURES * 6A C O N T IN U O U S COLLECTOR CURRENT * UPTO 20A PEAK COLLECTOR CURRENT * VERY LOW SATU RATIO N VO LTAG ES * EXCELLENT H fe CH ARACTERISTICS