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    C7001C Search Results

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    onsemi NDC7001C

    MOSFET N/P-CH 60V 0.51A SSOT6
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    DigiKey () NDC7001C Digi-Reel 19,548 1
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    NDC7001C Cut Tape 19,548 1
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    NDC7001C Reel 18,000 3,000
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    Avnet Americas () NDC7001C Reel 24,000 18 Weeks 3,000
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    NDC7001C Ammo Pack 1
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    Mouser Electronics NDC7001C 27,164
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    Newark () NDC7001C Cut Tape 41,744 1
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    NDC7001C Reel 3,000
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    Bristol Electronics NDC7001C 663 9
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    Rochester Electronics NDC7001C 246 1
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    TME NDC7001C 1,248 1
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    Richardson RFPD NDC7001C 6,000
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    Chip 1 Exchange NDC7001C 18,000
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    Avnet Asia NDC7001C 18 Weeks 6,000
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    Avnet Silica NDC7001C 19 Weeks 3,000
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    Chip Stock NDC7001C 296,600
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    EBV Elektronik NDC7001C 20 Weeks 3,000
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    IBS Electronics NDC7001C 51,000 3,000
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    Master Electronics NDC7001C 51,000
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    TE Connectivity ABC10C-7001C

    RECP ASSY
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    DigiKey ABC10C-7001C Bag
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    Avnet Americas ABC10C-7001C Bulk 25
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    Microchip Technology Inc NDC7001C

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    Bristol Electronics NDC7001C 2,346
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    Fairchild Semiconductor Corporation NDC7001C

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    Bristol Electronics NDC7001C 733
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    ComSIT USA NDC7001C 88
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    Chip 1 Exchange NDC7001C 2,807
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    IBS Electronics NDC7001C 213,000 3,000
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    Win Source Electronics NDC7001C 284,100
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    Fairchild Semiconductor Corporation NDC7001CNL

    006, Plastic Molded, Super SOT-6 Pkg, Dual, SMD (31)<AZ
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    Chip Stock NDC7001CNL 269,100
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    IBS Electronics NDC7001CNL 378,000 3,000
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    Win Source Electronics NDC7001CNL 256,600
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    Find more C7001C price and stock on Findchips.com

    C7001C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NDC7001C

    Contextual Info: ÎN M arch 1 9 9 6 N D C7001C Dual N & P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese dual N and P-ehannel en hancem en t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		NDC7001C g-11-â NDC7001C PDF

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE


    Original     		VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207 PDF

    Contextual Info: [N M a rc h 1 9 9 6 C7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		NDC7001C C7001C PDF