C1815LT1 Search Results

"device marking" HF

Abstract: C1815 C1815LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage

Contextual Info: C1815LT1 TRANSISTOR NPN COLLECTOR 3 P b Lead(Pb)-Free 3 1 1 BASE FEATURES 2 2 EMITTER Power dissipation SOT-23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50

Contextual Info: C1815LT1 C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150

Contextual Info: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range

c1815

Abstract: C1815LT1 C1815LT1 HF C1815L
Contextual Info: C1815LT1 C1815LT1 TRANSISTOR NPN SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

C1815L

Abstract: 1815LT1
Contextual Info: MCC SO T-23 P fa s tic -E n c a p s u la te T ra n s is to rs ^ 1 B ASE 2 . E M IT T E R 3.C O L L E C T O R C 1815L T 1 TR A N S IS TO R N P N ; ▲ o FEATURES ¿O s 2 Power dissipation Pc m : 0.2 W (T a m b = 2 5 r 2.4 Collector current lCM: 0.1 5 A Collector-base voltage

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

C1815L

Abstract: AV1815LT1 C1815LT1 AV1815
Contextual Info: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60