BYV26DGP Search Results

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V Tj max. 175 °C ed* t n e Pat DO-204AC (DO-15) * Glass Encapsulation technique is covered by

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency d* e t n

BYV26EGP

Abstract: BYV26DGP DO-204AC JESD22-B102 J-STD-002 BYV26EGPHE3
Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency d* e t n

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat * Glass Encapsulation technique is covered by

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V Tj max. 175 °C ed* t n e Pat DO-204AC (DO-15) * Glass Encapsulation technique is covered by

Contextual Info: BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

BYV26EGP

Abstract: BYV26DGP DO-204AC
Contextual Info: BYV26DGP and BYV26EGP Glass Passivated Ultrafast Rectifier * d e t n e t a P Features ct u d ro P New Reverse Voltage 800 to 1000V Forward Current 1.0A DO-204AC DO-15 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) min. • High temperature metallurgically bonded construction

DO-204AC

Abstract: J-STD-002 BYV26DGP BYV26EGP
Contextual Info: BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

Contextual Info: BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

BYV26EGP

Abstract: Diod DO-204AC J-STD-002 BYV26DGP on 047 byv26egp-e3 BYV-26EGP
Contextual Info: BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability

Contextual Info: BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

BYV26EGP

Abstract: BYV26DGP DO-204AC JESD22-B102D J-STD-002B
Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat * Glass Encapsulation technique is covered by

BYV26EGP

Abstract: BYV26DGP DO-204AC
Contextual Info: BYV26DGP and BYV26EGP Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 800 to 1000V Forward Current 1.0A DO-204AC DO-15 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. Features * d e t n

byv26eg

Contextual Info: BYV26DGP & BYV26EGP Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V Tj max. 175 °C ed* t n e Pat DO-204AC (DO-15) * Glass Encapsulation technique is covered by

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR120 SMD

Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
Contextual Info: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents