BUV42 Search Results
BUV42 FFF Equivalents (1)
The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| BUV42.MOD | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
BUV42 Functional Equivalents (5)
The Functional Equivalents tab will give you options that are likely to match the same function of BUV42, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| BUV42R1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| BUV42 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| BUV42 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| BUV42.MODR1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| BUV42.MODR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Bipolar Transistor, 12A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
BUV42 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BUV42 |
|
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=12 / Hfe=- / fT(Hz)=- / Pwr(W)=120 | Original | 10.96KB | 1 | ||
| BUV42 |
|
SILICON NPN SWITCHING TRANSISTOR | Original | 48.91KB | 5 | ||
| BUV42 |
|
Shortform Data Book 1988 | Short Form | 48.8KB | 1 | ||
| BUV42 | Thomson-CSF | Shortform Semiconductor Catalogue 1982 | Short Form | 38.38KB | 1 | ||
| BUV42A |
|
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=12 / Hfe=- / fT(Hz)=- / Pwr(W)=120 | Original | 10.96KB | 1 | ||
| BUV42A |
|
Shortform Data Book 1988 | Short Form | 48.8KB | 1 |
BUV42 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 3 7E SEMELAB LTD D • Û1331B7 00001Ô2 SEM ELAB JUL 0 6 1988 BUV42 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M EC H A N IC A L DATA Dim ensions in mm FEATURES |
OCR Scan |
1331B7 BUV42 | |
VCEO
Abstract: TO3 package
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OCR Scan |
BUV18 BUV41 BUV42 BUV42A BUV52 BUV60 BUV62 BUX10 BUX11 BUX12 VCEO TO3 package | |
BUV42Contextual Info: BUV42 MECHANICAL DATA Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 FEATURES 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) |
Original |
BUV42 O204AA) BUV42 | |
IC 7414Contextual Info: BUV42A MECHANICAL DATA Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 FEATURES 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) |
Original |
BUV42A O204AA) IC 7414 | |
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Contextual Info: f Z 7 SGS-THOMSON 7# ^ 5 BUV42A ¡LiO T@ iO S FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES . LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA TION TO-3 ABSOLUTE MAXIMUM RATINGS Symbol < V O o m VcEV |
OCR Scan |
BUV42A | |
BUV42Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
Original |
BUV42 O204AA) 31-Jul-02 BUV42 | |
BUV42Contextual Info: Inchange Semiconductor Product Specification BUV42 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Fast switching times ・Low collector saturation voltage APPLICATIONS ・For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base |
Original |
BUV42 BUV42 | |
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Contextual Info: • 7= ^ 231^0020737 0 ■ ¡" " P '3 3 “ì3 _ SGS-THOMSON ¡[ L ìO T q « S S G S-TH0MS0N BUV42A 30E ]> FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA |
OCR Scan |
BUV42A | |
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Contextual Info: SEMELAB 37E D LTD JUL 0 6 1988 • Ô1331Ô7 DGODlfiM 5 SEMELAB BUV42A NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M E C H A N IC A L D A T A D im e nsion s in mm |
OCR Scan |
BUV42A | |
|
Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
Original |
BUV42 O204AA) 18-Jun-02 | |
BUV42Contextual Info: SavantIC Semiconductor Product Specification BUV42 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base |
Original |
BUV42 BUV42 | |
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Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV42 SILICON NPN SWITCHING TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD |
Original |
BUV42 | |
BUV42
Abstract: BB 555 pbas P003N
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Original |
BUV42 BUV42 BB 555 pbas P003N | |
BUV42AContextual Info: BUV42A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
Original |
BUV42A O204AA) 31-Jul-02 BUV42A | |
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Contextual Info: BUV42A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
Original |
BUV42A O204AA) 18-Jun-02 | |
|
Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
Original |
BUV42 O204AA) 16-Jul-02 | |
|
Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS |
OCR Scan |
GGDD42D -550/xm 19mils IMPRUV40 BUX10 BDY58 BUX11 BUW91 BUX12 BUV42 | |
k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
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Original |
MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 | |
BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
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Original |
2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 | |
TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
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OCR Scan |
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BUV42Contextual Info: rrz ^ 7# SGS-THOMSON QjaniBiB@igugigir^ ieieg_ B U V 4 2 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . FAST SWITCHING TIMES . LOW SWITCHING LOSSES . VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION |
OCR Scan |
BUV42 0DbS335 GDbS33b BUV42 | |
mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
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OCR Scan |
BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP | |
BUS11A
Abstract: BUV11 BUT91
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OCR Scan |
BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91 | |
DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
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Original |
2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 | |