BSP30 Search Results

BB5Z

Abstract: BSP30 BSP31 BSP32 BSP33 VC80
Contextual Info: • bbS3T31 a0254b0 57b HIAPX BSP30 TO 33 b?E J> N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in m iniature plastic envelopes intended fo r application in thick and th in-film circuits. T h e y are intended fo r use in telephony and general industrial applications.

TPS6113X

Abstract: BSP30
Contextual Info: Surface Mount Power Inductor ELECTRONICS INC. EPI BSP30 Series • Used as a Sepic Inductor on T.I.’s TPS6113X Series • Low loss material ensures operation in high frequency switching converters, such as Buck, BoostCouple Inductor or as Flyback Transformer

Contextual Info: BSP30 TO 33 V SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in m in i a tu r e plastic packages inte nd ed fo r a p p lic a ti o n in th i c k and t h i n fi l m circuits. T h e y are intend ed for use in te le p h o n y and general in du str ial applications.

BSP30

Abstract: BSP32 BSP40 BSP42 FMMT493
Contextual Info: BSP40 BSP42 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 ✪ C COMPLEMENTARY TYPES – BSP40 – BSP30 BSP42 – BSP32 PARTMARKING DETAIL – E Device type in full C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP40 BSP42 UNIT Collector-Base Voltage

BSP304

Abstract: BSP304A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode

Contextual Info: Not Recommended for New Design Please Use FMMT491 / FMMT493 BSP40 BSP42 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 ✪ C COMPLEMENTARY TYPES – BSP40 – BSP30 BSP42 – BSP32 PARTMARKING DETAIL – E Device type in full C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Surface Mount Power Inductor ELECTRONICS INC. EPI BSP30 Series V Features of the EPI “BSP30” Series of Surface Mount Power Inductors µSec. • Low loss material ensures operation in high frequency switching • converters, such as Buck, Boost or as output averaging filter inductor

7014E

Contextual Info: BSP300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2.0. 4.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 Pin 2 G D Type VDS ID RDS(on) Package Marking BSP300

BSP30

Abstract: BSP32 BSP40 BSP42 fmmt493
Contextual Info: BSP40 BSP42 SOT223 NPN SILICON PLANAR MEDIUM ISSUE 3- POWER TRANSISTORS FEBRUARY 1996 I I I COMPLEMENTARY TYPES PARTMARKING DETAIL - - BSP40 - BSP30 BSP42 - BSP32 Device typ,! c in full E * c \& B ABSOLUTE MAXIMUM PARAMETER RATINGS. — Collector-Base —

BSP40

Abstract: BSP41 BSP42 BSP43
Contextual Info: BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

BSP308

Abstract: VPS05163
Contextual Info: Preliminary data BSP308 SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Logic Level Continuous drain current VDS ID 30 V 0.05 Ω 4.7 A • dv/dt rated

Contextual Info: Infineon Preliminary data technologies BSP308 SIPMOS Power-Transistor Features Product Summary • N-Channel Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance ^DS on • Logic Level Continuous drain current 30 V 0.05 Q. 4.7

BSP31

Abstract: BSP42 BSP43 BSP30 BSP32 BSP33 BSP40 BSP41
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP30; BSP31; BSP32; BSP33 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification

Contextual Info: Surface Mount Power Inductor ELECTRONICS INC. EPI BSP30 Series • Used as a Sepic Inductor on T.I.’s TPS6113X Series • Low loss material ensures operation in high frequency switching converters, such as Buck, BoostCouple Inductor or as Flyback Transformer

Contextual Info: Preliminary data BSP308 SIPMOS  Power-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Logic Level Continuous drain current VDS ID 30 V 0.05 Ω 4.7 A • dv/dt rated

BSP40

Abstract: BSP41 BSP42 BSP43
Contextual Info: BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

BSP304A

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A FEATURES DESCRIPTION • Direct interface to C-MOS, TTL etc. P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP304; BSP304A FEATURES DESCRIPTION • Direct interface to C-MOS, TTL etc. P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

Contextual Info: SGS-THOMSON RülD@œi[LI BTIs! IS!inCi BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: bbS3T31 QD2S 4bO S7b « A P X N AUER PHILIPS/DISCRETE BSP30 TO 33 b?E » JV SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

Contextual Info: Surface Mount Power Inductor ELECTRONICS INC. EPI BSP30 Series • Low loss material ensures operation in high frequency switching converters, such as Buck, Boost or as output averaging filter inductor • Also suitable for use in high quality filter applications

BSP304

Abstract: BSP304A
Contextual Info: DISCRETE SEMICONDUCTORS BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b Philips Semiconductors 1997 Oct 22 PHILIPS Philips Semiconductors Product specification

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP30; BSP31; BSP32; BSP33 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 08 Philips Semiconductors Product specification

Contextual Info: SGS-THOMSON BSP30/31 BSP32/33 RülD»ll[L10îl3 i«ei MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL