BGB550 Search Results

BGB550 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BGB550	Infineon Technologies	Biased RF-Trans. in SIEGET45 Technology Icmax = 300mA, SCT595	Original	PDF	462.43KB	9
BGB550	Infineon Technologies	Mirror Biased Transistor	Original	PDF	137.57KB	9
BGB550_	Infineon Technologies	fT=30GHz, Icmax=300mA, SCT595	Original	PDF	462.43KB	9
BGB550E6327	Infineon Technologies	MMIC, Driver Amplifier	Original	PDF	462.43KB	9

BGB550 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SCT595 Abstract: BGB550 SCT-595 high voltage current mirror Contextual Info: NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 -mirror mirrorbiased biasedRF RFtransistor transistor internal circuit -collector collectorcurrent currentup uptoto350mA 350mA -low lowoperation	Original	BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror	PDF
ic 7912 Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352 Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,	Original	D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352	PDF
T0529 Abstract: BGB550 SCT595 Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 5 0 , J a n . 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . @qvvÃ! QiyvurqÃiÃDsvrÃUrpuytvrÃ6B	Original	BGB550 10max T0529 SCT595	PDF

Catalog Datasheet

Type

Document Tags

PDF

SCT595

Abstract: BGB550 SCT-595 high voltage current mirror
Contextual Info: NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 -mirror mirrorbiased biasedRF RFtransistor transistor internal circuit -collector collectorcurrent currentup uptoto350mA 350mA -low lowoperation

Original

BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror

PDF

ic 7912

Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,

Original

D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352

PDF

T0529

Abstract: BGB550 SCT595
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 5 0 , J a n . 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . @qvvÃ! QiyvurqÃiÃDsvrÃUrpuytvrÃ6B

Original

BGB550 10max T0529 SCT595

PDF