BD241C Search Results

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN 14.42

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

mje15033 replacement

Abstract: 2SD694 2SC1832 MJE340 D40K MJ12002 BDW59 2SC187 MJ3237 BD3851
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc Max @ IC = 3.0 Adc

bd241

Abstract: bd241c
Contextual Info: BD241/A/B/C NPN EPITAXIAL SILICO N TRAN SISTO R MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSO LU TE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage: BD241 : BD241A . BD241B . BD241C Collector Emitter Voltage : BD241

D242A

Contextual Info: r z j SCS-THOM SO N Ä T # ifflœmiliswâûioes BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec

400 watts amplifier circuit diagram

Abstract: BD241C-D BDXXX BD241C BD242B BD242C
Contextual Info: BD241C* NPN , BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS

BA241

Abstract: ba241c 30Vc
Contextual Info: NPN BD241C * Complementary Silicon Plastic Power Transistors PNP BD242B BD242C * . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — *ON Semiconductor Preferred Device VCE = 1.2 Vdc Max @ IC = 3.0 Adc

D242A

Abstract: bd241 D-242a
Contextual Info: BD241 A/B/c BD242A/B/C r z T SG S-TH O M SO N Ä 7 # R8D lS S l[LliSTl^©iB0i COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec

BD24x

Abstract: BD241CG BD242CG
Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

Contextual Info: BD241CFP NPN SILICON POWER TRANSISTOR . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION U.L. COMPLIANT APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN transistor mounted in TO-220FP fully molded

BD242A

Abstract: TIP31 NPN Transistor diagram BD241A BD241B BD241C BD242B BD242C
Contextual Info: BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.

TIP31 NPN Transistor diagram

Abstract: BD242A TIP31 application BD241A BD241B BD241C BD242B BD242C
Contextual Info: BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.

tj241

Abstract: 241B BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241, 241A, 241B, 241C NPN PLASTIC POWER TRANSISTORS

BD241A

Abstract: TIP31 NPN Transistor diagram BD241B BD241C BD242A BD242B BD242C bd242c ST
Contextual Info: BD241A/B/C BD242A/B/C  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.

Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

BD241C

Abstract: BD241A BD242A BD242C JESD97
Contextual Info: BD241A BD241C NPN power transistors Features • . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

Contextual Info: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductort Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

B0241A

Abstract: TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32 BD241 BD241B
Contextual Info: BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE W ITH BD242A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current Min fT of 3 MHz at 10 V , 500 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

Contextual Info: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

NT 407 F power transistor

Abstract: NT 407 F transistor BD241C-D b0242b
Contextual Info: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA BD241C* PNP Com plem entary Silicon Plastic Power Transistors BD242B BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage —

D241C

Contextual Info: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241