D241C Search Results

D2388

Abstract: D245A 6R 190 C6 D141A D231A D242A 2158D D1288 d405 3R4G
Contextual Info: Mechanical Outlines - LED Display C A SE D-131 D-132 D-133 D-134 _2.54 0 . 1 J P I N 14) 15.24 19.06 (0.75) ( 0 .6 ) (0.047) —0.8(0.03) -10.1(0.4)— | -5.4(0.21) 12.6 (0.5) MIN. 00.5(0.02)— 7.62 (0.3)~ ( PIN 7 j i PIN 8 ) Circuit Diagram PIN NO. PIN NO.

d444c

Abstract: C1969 G451 D261C G331 G33-1 d686 G781 D501C D562C
Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D T Q bS ST ? O O D l E i b P3G4000 SUB-NANOSECOND GATE ARRAY WITH VHSIC PHASE II FEATURE SIZES D 10 OMIFOIRIH&iriOI r - w - n - o j FEATURES • 4300 Gate, Gate array ■ Low P ow er O peration, 0.5 W @ 80 M Hz Fully TTL o r 3.3 Volt CM OS Com patible Input

D241C

Contextual Info: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD241 : BD241A : BD241B : D241C Collector Emitter Voltage : BD241

D242B

Abstract: D241C BD242B equivalent bd242c BD241B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B Com plem entary Silicon Plastic Power Transistors D241C* PNP BD242B . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage — Vc e = 1-2 Vdc Max @ lc = 3.0 Adc

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: 1 • High performance, low cost, open frame plug-in type dry reed relays. • Durable molded glass-filled polyester relay body with reed contact and terminals securely held in place at each end with epoxy. OUTLINE DIMENSIONS 1 .1 2 5 2 8 .6 W TABLE 1 .0 2 0 M IN

D444C

Abstract: D443C g331 D562C D331C G451 g443 d261c D121C h402
Contextual Info: PERFORMANCE SEMICONDUCTOR T Q bS ST ? O O D l E i b 20E D P3G4000 SUB-NANOSECOND GATE ARRAY WITH VHSIC PHASE II FEATURE SIZES D ID ÜMF0IRÜSATI1OS r -w -ii-o ? FEATURES • 4300 Gate, Gate array ■ Low Power Operation, 0.5 W @ 80 MHz Fully TTL or 3.3 Volt CMOS Compatible Input