BD135-16 MOT Search Results

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

BD135

Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU

bd135 equivalent

Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

si diode 1N4007

Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

150 j47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

si diode 1N4007

Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The

bd135 equivalent

Abstract: VARIABLE capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line UHF P o w er T ransistor The TP3012 is designed fo r 900 MHz m o b ile stations in b oth analog and d ig ita l a p p li­ cations. It in co rp o rates high value e m itte r ballast resistors, gold m e ta llizatio n s and offers

CHIP DIODE m7

Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li­

atc100a

Abstract: BD135 TP5050 Common emitter amplifier Microstrip Line C 3311 transistor
Contextual Info: MOTOROLA SC XSTRS/R F 4bE » • b3b7S5H 0 0 ^ 2 5 0 4 ■flO Tb MOTOROLA 11 ■ SE M IC O N D U C T O R TECHNICAL DATA TP5050 The RF Line U H F Linear P o w e r T ra n sisto r . . . d e sig n e d for 24 Volt U H F large -signal c o m m o n emitter am plifier applications in

bd135 TRANSISTOR REPLACEMENT GUIDE

Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc

linear amplifier 470-860

Abstract: TPV695A bl557a 611104 470-860 BD135 motorola balun
Contextual Info: MOTOROLA Order this document by TPV695A/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV695A Designed for driver and output stages in band IV and V TV transposers and transmitter amplifiers. The TPV695A uses gold metallized die with diffused

transistor rf m 1104

Abstract: MOTOROLA TRANSISTOR 935
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

TANTAL C-16

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPM4040 Th e RF Line UHF Power Transistor T h e TPM 4040 is an in tern ally m atched tra n sisto r in a push-pull p ackage sp e cially d esig ned for m ulti-octave bandw id th high g ain and p ow er ap plica tio n s. Its internal

pont de diode

Abstract: TP3064 MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007
Contextual Info: Order th is data sheet by TP3064/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3064 The RF Line RF Power Transistor The TP3064 is designed for960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations

transistor rf m 1104

Abstract: MOTOROLA TRANSISTOR 935 MRF641 motorola rf 1104 Power Transistor motorola rf Power Transistor 3 w RF POWER TRANSISTOR NPN bd135 n 1N4007 BD135 MRF6414
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

transistor rf m 1104

Abstract: DL110 015 j47 1N4007 BD135 MRF6414
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

15 w RF POWER TRANSISTOR NPN

Abstract: transistor rf m 1104
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

diode 1n4007

Abstract: motorola rf Power Transistor Motorola 1N4007 1N4007 BD135 MRF6414 transistor rf m 1104
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

BUY60

Abstract: MOTOROLA TRANSISTOR 736
Contextual Info: MOTOROLA The RF Line MRF6414 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e

178 09T

Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

rohm mtbf

Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A