BCX20 Search Results

Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

6302

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC NPN GENERAL PURPOSE NPN RATINGS DEVICE BCW60D BCW71 BCW72 BCW81 BCX19 BCX20 BCX56 BCX70G BCX70H BCX70J BCX70K NEBTA06 NEBT2222 NEBT2222A NEBT3903 NEBT3904 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ 32

BCX17L

Abstract: BCX18L BCX19L BCX20L
Contextual Info: M O T O R O L A SC M A X I M U M R A T IN G S Value Rating Sym bol BCX17L BCX19L BCX18L BCX20L Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage Ve b O 5.0 Vdc ic 500 mAdc Collector Current — Continuous

BCX17

Abstract: BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1
Contextual Info: MOTOROLA Order this document by BCX17LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BCX19

Abstract: lem HA BCX20
Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: IL BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 0.14 0.09 _L 0.70 0.50 1 1.4 1.2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR R0.1 .004 ' I fV R0.05

BCX19

Abstract: BCX20
Contextual Info: L BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.1 4 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

Contextual Info: General Purpose Transistors 3 COLLECTOR 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 3 COLLECTOR 1 BASE 2 EMITTER 2 EMITTER Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS 1 Value Rating Symbol BCX17LT1 BCX19LT1 BCX18LT1 BCX20LT1

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

MV SOT23

Abstract: BCX18 BCX17 BCX18R t4 sot23 diode BCX17R BCX19 BCX20 DSA003674
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCX17 BCX18 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS – BCX17 BCX18 BCX17R BCX18R – T1 – T2 – T4 – T5 E C B COMPLEMENTARY TYPES - BCX17 - BCX19 BCX18 - BCX20 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCX20LT1

Contextual Info: BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage 1. Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation PD 225 mw 1.8

BCX19

Abstract: BCX20
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER

BCX20

Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCX20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 General Purpose Transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

Contextual Info: Transistors IC SMD Type Product specification BCX20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 General Purpose Transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05

m152

Abstract: M151 BCX17 BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1 m152 sot-23 marking M152
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors 3 COLLECTOR 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 3 COLLECTOR 1 BASE 2 EMITTER 2 EMITTER Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS Value Rating Symbol 1 BCX17LT1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

BCX19

Abstract: BCX19R BCX20 MV SOT23 partmarking 5 C BCX17 BCX18 BCX20R u2 ic base DSA003674
Contextual Info: BCX19 BCX20 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS – COMPLEMENTARY TYPES - BCX19 BCX20 BCX19R BCX20R - U1 U2 U4 U5 BCX19 BCX20 BCX17 BCX18 - E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX19

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

2N3702 NATIONAL SEMICONDUCTOR

Abstract: national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124
Contextual Info: n NAIL SEMICOND -[DISCRETE t.3E D • bSD113a Q03TS33 b7ti Devices V CE0 sust (Volts) Min 25 NPN PNP mi mA NF (dB) (MHz) Min mA Max 5.0 P D (Amb) Package (mW) @25 °C Max Min Max 2N3391A 100 250 500 2.0 120 Typ. 2.0 2N3392 100 150 300 2.0 120 Typ. 2N3393

Contextual Info: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72